Kozlovskii V V

Publications in Math-Net.Ru

1. Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  45
2. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
3. Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1578
4. Radiation-produced defects in germanium: experimental data and models of defects
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1632–1646
5. Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1313–1319
6. Electrical properties of diluted $n$- and $p$-Si$_{1-x}$Ge$_x$ at small $x$
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1592–1596
7. Phosphorus diffusion in silicon carbide
   
   Fizika Tverdogo Tela, 34:6 (1992),  1956–1958
8. Transmutation doping of semiconductors under te action of charged particles (Review)
   
   Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  3–21
9. REDISTRIBUTION OF A CHARGED ADMIXTURE IN A SEMICONDUCTOR IN CONDITIONS OF PROTON-STIMULATED DIFFUSION
   
   Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1157–1162
10. Antimony Diffusion in Silicon Stimulated by Protons
    
    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  958–960
11. Effect of Surface on Radiation Defect Formation in Silicon under High-Temperature Proton Irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  956–958