Eliseyev Il'ya Aleksandrovich

Publications in Math-Net.Ru

1. Влияние термической обработки на оптические и электрофизические свойства $\alpha$-GeTe
   
   Fizika Tverdogo Tela, 67:12 (2025),  2448–2452
2. Температурная стабильность спиновых дефектов в $6H$-SiC на основе данных фотолюминесценции и электронного парамагнитного резонанса
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 122:2 (2025),  116–122
3. Control of charge carrier density in photo-FET structures based on atomically thin CVD-MoS$_2$
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  230–234
4. Low-temperature luminescence study of the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes
   
   Fizika Tverdogo Tela, 66:12 (2024),  2193–2196
5. Characteristics of Raman spectra of 2$H$-$\alpha$-In$_2$Se$_3$ layered crystals of different thicknesses
   
   Fizika Tverdogo Tela, 66:12 (2024),  2189–2192
6. Study of angular and temperature dependences of Cr$^{3+}$ impurity luminescence in $\beta$-Ga$_2$O$_3$
   
   Fizika Tverdogo Tela, 66:12 (2024),  2185–2188
7. Local diagnostics of spin defects in irradiated SiC Schottky diodes
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024),  367–373
8. Study of stress relief and strain distribution in graphene films of biosensors for viral infections
   
   Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
9. Optical and spin properties of silicon vacancy centers created by proton irradiation in a $6H/15R$ silicon carbide heterostructure
   
   Fizika Tverdogo Tela, 65:6 (2023),  1031–1036
10. Investigation of the Cr$^{3+}$ impurity luminescence in proton-irradiated $\beta$-Ga$_2$O$_3$
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  573–576
11. Electron-phonon interaction in perovskite nanocrystals in fluorophosphate glass matrix
    
    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  313–320
12. Anti-Stokes photoluminescence of perovskite CsPbBr$_3$ nanocrystals in a fluorophosphate glass matrix
    
    Optics and Spectroscopy, 130:11 (2022),  1739–1744
13. Modification in adsorption properties of graphene during the development of viral biosensors
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
14. Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method
    
    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  225–228
15. Electronic spectroscopy of graphene obtained by ultrasonic dispersion
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  23–25
16. Formation of iron silicides under graphene grown on the silicon carbide surface
    
    Fizika Tverdogo Tela, 62:10 (2020),  1726–1730
17. Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide
    
    Fizika Tverdogo Tela, 62:3 (2020),  462–471
18. Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1397
19. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
20. A study of the photoresponse in graphene produced by chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
21. Cobalt intercalation of graphene on silicon carbide
    
    Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
22. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1940–1946
23. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
24. Intercalation of iron atoms under graphene formed on silicon carbide
    
    Fizika Tverdogo Tela, 60:7 (2018),  1423–1430
25. Graphene on silicon carbide as a basis for gas- and biosensor applications
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
26. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  526
27. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
28. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72


29. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383