Lebedev Sergei Pavlovich

Publications in Math-Net.Ru

1. Метод регистрации фазы для визуализации однослойного и двуслойного графена на поверхности SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  18–21
2. Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  294–297
3. the features of the crystallization of an intermediate silicon layer during the transfer of a thin 3C-SiC(001) layer onto a 6H-SiC(0001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  11–14
4. Graphene-based biosensors for neurodegenerative dementia detection
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
5. Interaction of silicon carbide with silicon melt formed under conditions of direct bonding of epitaxial structures of 3C-SiC/Si and 6H-SiC wafers
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  501–504
6. Study of stress relief and strain distribution in graphene films of biosensors for viral infections
   
   Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
7. SiC/graphene-based test structures for the Kelvin probe microscopy instrumental function determination
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  24–27
8. Electron Diffraction Study of transformation the reconstruction 6$\sqrt{3}$ on 4H-SiC(0001) in quasi-free-standing epitaxial graphene
   
   Fizika Tverdogo Tela, 64:12 (2022),  2055–2060
9. The temperature distribution simulation in the graphene sublimation growth zone on SiC substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1776–1780
10. Chemiluminescence of a functionalized graphene surface
    
    Optics and Spectroscopy, 130:9 (2022),  1417–1422
11. Modification in adsorption properties of graphene during the development of viral biosensors
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
12. Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype
    
    Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1094–1098
13. Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method
    
    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  225–228
14. Formation of iron silicides under graphene grown on the silicon carbide surface
    
    Fizika Tverdogo Tela, 62:10 (2020),  1726–1730
15. Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide
    
    Fizika Tverdogo Tela, 62:3 (2020),  462–471
16. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
17. Terahertz near-field response in graphene ribbons
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  29–32
18. Studying the sensitivity of graphene for biosensor applications
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
19. Electron diffraction study of epitaxial graphene formed by thermal destruction of SiC(0001) in an Ar environment and in high vacuum
    
    Fizika Tverdogo Tela, 61:10 (2019),  1978–1984
20. Cobalt intercalation of graphene on silicon carbide
    
    Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
21. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1940–1946
22. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
23. Field effect in monolayer graphene associated with the formation of graphene–water interface
    
    Fizika Tverdogo Tela, 60:12 (2018),  2474–2477
24. Intercalation of iron atoms under graphene formed on silicon carbide
    
    Fizika Tverdogo Tela, 60:7 (2018),  1423–1430
25. Electron-diffraction study of the structure of epitaxial graphene grown by the method of thermal destruction of 6$H$- and 4$H$-SiC (0001) in vacuum
    
    Fizika Tverdogo Tela, 60:7 (2018),  1403–1408
26. Graphene on silicon carbide as a basis for gas- and biosensor applications
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
27. Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1512–1517
28. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
29. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
30. Local anodic oxidation of graphene layers on SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018),  34–40
31. Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide
    
    Fizika Tverdogo Tela, 59:10 (2017),  2063–2065
32. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
33. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
34. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72
35. Transport properties of graphene in the region of its interface with water surface
    
    Fizika Tverdogo Tela, 58:7 (2016),  1432–1435
36. Supersensitive graphene-based gas sensor
    
    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  135–139
37. Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6$H$-SiC (000$\bar1$) in vacuum
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  967–972
38. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71
39. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  364–368
40. Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1554–1558
41. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1279–1282
42. Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  267–272
43. Annealing of radiation-compensated silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  90–94
44. Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  634–638
45. Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1436–1438
46. Use of sublimation epitaxy for obtaining volume 3C-SiC crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  71–77
47. Studying edge luminescence of $n$-3C-SiC epilayers grown on 6H-SiC substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  32–37


48. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383