Atamuratova Z A

Publications in Math-Net.Ru

1. Anomalous behavior of lateral $C$–$V$ characteristic of an MNOS transistor with an embedded local charge in the nitride layer
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1067–1070
2. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
   
   Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017),  75–78
3. Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes
   
   Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017),  71–74
4. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat
   
   Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015),  837–842