Publications in Math-Net.Ru
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Dependence of ac electrical resistivity on the thickness of the DLC layer in In/DLC//Si/In nanostructure
Fizika Tverdogo Tela, 67:2 (2025), 246–256
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Charge accumulation and relaxation in active mode of Al/Si$_3$N$_4$/$n$-Si and Al/Si$_3$N$_4$/SiO$_2$/$n$-Si device structures
Zhurnal Tekhnicheskoi Fiziki, 95:11 (2025), 2221–2228
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Electrical properties of carbon nanotubes / $\mathrm{WS}_2$ nanotubes (nanoparticles) hybrid films
Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016), 37–43
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Impedance of Si/SiO$_2$ composites in the vicinity of the percolation threshold
Fizika Tverdogo Tela, 53:3 (2011), 433–437
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Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
Zhurnal Tekhnicheskoi Fiziki, 80:10 (2010), 74–82
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Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
Fizika i Tekhnika Poluprovodnikov, 44:3 (2010), 397–401
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