Popov Vladimir Pavlovich

Publications in Math-Net.Ru

1. Thermally stable ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) in silicon-on-insulator and silicon-on-sapphire heterostructures after rapid thermal annealing treatments and oxidation-induced silicon thinning
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:12 (2025),  945–951
2. Structural changes in nanometer-thick silicon-on-insulator films during high-temperature annealing
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  320–327
3. Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  192–198
4. Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  217–223
5. Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  502–507
6. Bonding energy of silicon and sapphire wafers at elevated temperatures of joining
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  65–69
7. Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1589–1596
8. Positive charge in SOS heterostructures with interlayer silicon oxide
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1220–1227
9. Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  643–649
10. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1360–1366
11. Doping silicon with erbium by recoil implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  52–60
12. Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1348–1353
13. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1339–1343
14. Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1228–1233
15. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597
16. Silicon-on-insulator structures with a nitrogenated buried SiO$_2$ layer: Preparation and properties
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  335–342
17. Growth of monocrystalline $\alpha\text{-Si}_{3}\text{N}_{4}$ in buried layers produced by low-intensity implantation of N$^{+}$ ions into heated silicon
    
    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1390–1393
18. Effect of annealing under anode oxide on the variation of surface composition and conversion of conduction type for $p$-Cd$_{x}$Hg$_{1-x}$Te ($x\simeq0.2$) single crystals
    
    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  310–317
19. Crystalline-amorphous phase transition in heavily doped silicon
    
    Fizika Tverdogo Tela, 28:10 (1986),  3134–3136


20. Леонид Степанович Смирнов к 80-летию со дня рождения (1932–2011)
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  861–863