Bondarev A D

Publications in Math-Net.Ru

1. Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  16–19
2. On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1584–1592
3. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
4. Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  38–41
5. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
6. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
7. Properties of AlN films deposited by reactive ion-plasma sputtering
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1429–1433
8. Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  936–941
9. Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1564–1569
10. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
11. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1082–1086
12. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
13. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
14. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
15. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421
16. Investigation of optical and photoelectric properties of heteroepitaxial films of bismuth titanate and gallate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  713–717