Kalinina Evgeniya Viktorovna

Publications in Math-Net.Ru

1. Modeling of processes of irradiation of Cr/4H-SiC structures with high-energy Ar ions
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1157–1163
2. Irradiation with argon ions of Schottky diodes based on 4H-SiC
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  493–496
3. Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev
   
   Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023),  562–567
4. Irradiation with argon ions of Cr/4H-SiC-photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  254–258
5. Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1368–1373
6. Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1244–1248
7. Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  195–201
8. Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  856–861
9. Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
   
   Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  651–658
10. Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  73–78
11. Irradiation of 4H-SiC UV detectors with heavy ions
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  550–556
12. The long-range effect in 6H-SiC under irradiation with Xe ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  47–53
13. Optical and electrical properties of 4H-SiC irradiated with Xe ions
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  167–174
14. A high-temperature radiation-resistant rectifier based on $p^+$–$n$ junctions in 4H-SiC ion-implanted with aluminum
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  807–816
15. Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985),  669–671
16. Cathodoluminescence of SiC Ion-Doped by Aland Ar
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  700–703