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Gallium-arsenide photocathode with the integral sensitivity of
$3200$
mkA-lm
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
11
:10 (1985),
602–605
On the Dependence of Photoluminescence Quantum Yield in GaAs
$_{1-x}$
Sb
$_{x}$
Solid Solution on Temperature and Composition
Fizika i Tekhnika Poluprovodnikov
,
18
:7 (1984),
1251–1255
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