Gavrina Polina Sergeevna

Publications in Math-Net.Ru

1. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
2. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
3. Temperature dependence of the output optical power of semiconductor lasers–thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Kvantovaya Elektronika, 54:4 (2024),  218–223
4. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
5. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
6. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
   
   Kvantovaya Elektronika, 52:2 (2022),  174–178
7. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
8. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
9. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
   
   Kvantovaya Elektronika, 51:2 (2021),  129–132
10. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
11. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
12. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
13. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
14. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
15. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
16. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
17. All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1491–1498