Karlina Ludmila Borisovna

Publications in Math-Net.Ru

1. Self-catalytic growth of GaInP nanostructures on silicon substrates from vapor phase: choice of source composition and catalytic droplets
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  265–269
2. GaInP on silicon nanostructures self-catalyst growth from vapor phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  45–49
3. Features of InP on Si nanowire growth
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  530–533
4. Influence of source composition on the planar growth of nanowires during catalytic growth in a quasi-closed volume
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1082–1087
5. Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1714–1717
6. Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1244–1249
7. X-ray study of the superstructure in heavily doped porous indium phosphide
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  89–92
8. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
   
   Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
9. Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium
   
   Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  611–614
10. Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells
    
    Zhurnal Tekhnicheskoi Fiziki, 83:7 (2013),  106–110
11. Highly efficient photovoltaic cells based on In$_{0.53}$Ga$_{0.47}$As alloys with isovalent doping
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  240–245
12. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP
    
    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569