Ivanov Alexandr Mikhailovich

Publications in Math-Net.Ru

1. Шумовая спектроскопия тока в ультрафиолетовых светодиодах на основе InGaN/GaN-структур с квантовыми ямами
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  45–48
2. Physical aspects of changes in light-emitting structures with InGaN/GaN quantum wells during heating and short-term electrical influences
   
   Optics and Spectroscopy, 133:4 (2025),  390–394
3. Impedance spectroscopy and low-frequency noise in thin films of carbon quantum dots
   
   Fizika Tverdogo Tela, 66:7 (2024),  1189–1194
4. Drop in external quantum efficiency during cooling and noise density during heating in InGaN ultraviolet LEDs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  35–38
5. Degradation of InGaN/GaN quantum well UV LEDs caused by short-term exposure to current
   
   Zhurnal Tekhnicheskoi Fiziki, 92:2 (2022),  283–290
6. Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  596–600
7. Low-frequency noise in light-emitting diodes based on InGaN/GaN quantum wells under electric actions accompanied with an increase in the external quantum efficiency
   
   Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021),  76–81
8. Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  104–110
9. The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016),  1–8
10. Hopping transport in the space-charge region of $p$–$n$ structures with InGaN/GaN QWs as a source of excess $1/f$ noise and efficiency droop in LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  847–855
11. Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors
    
    Zhurnal Tekhnicheskoi Fiziki, 82:4 (2012),  131–135
12. Solubility of sulfur in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  993–994
13. Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of $n$-type
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  473–481
14. On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1422–1426
15. Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  145–148
16. Forward-current-generated donor centers in high-voltage 4H-SiC based $p$–$i$–$n$ diodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  45–50
17. Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on $p$-type silicon
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1064–1067
18. The problem of uniformity of properties of 4H-SiC CVD films
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  1002–1006
19. Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  706–712
20. Deep levels of thermodefects in high-resistance specially pure $n$-type silicon
    
    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1962–1970
21. Pseudopeaks in DLTS spectra of planar diode structures
    
    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  477–480
22. HOLOGRAPHIC CHARACTERISTICS OF A MESOMORPHIC MODULATOR OF LIGHT ON THE TWIST-EFFECT WITH AN ORGANIC POLYMERIC PHOTOCONDUCTOR
    
    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  729–734
23. SPACE-TIME LIGHT-MODULATOR BASED ON THE PHOTOCONDUCTING ORGANIC POLYMER-LIQUID CRYSTAL-STRUCTURE WITH THE TWIST-EFFECT
    
    Zhurnal Tekhnicheskoi Fiziki, 57:3 (1987),  598–600