Ratnikov Valentin Vyacheslavovich

Publications in Math-Net.Ru

1. Comparison of characteristics of thin PZT films on Si-on-sapphire and Si substrates
   
   Fizika Tverdogo Tela, 63:8 (2021),  1076–1083
2. Structural characterization of a short-period superlattice based on the CdF$_{2}$/CaF$_{2}$/Si(111) heterostructure by transmission electron microscopy and X-ray diffractometry
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  3–6
3. An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  26–30
4. Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  36–39
5. Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  643–650
6. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
7. X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  61–69
8. Estimation of quality of GaAs substrates used for constructing semiconductor power devices
   
   Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  149–152
9. Structural and optical properties of porous silicon prepared from a $p^+$-epitaxial layer on $n$-Si(111)
   
   Zhurnal Tekhnicheskoi Fiziki, 83:3 (2013),  96–100
10. Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  25–32
11. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals
    
    Zhurnal Tekhnicheskoi Fiziki, 80:4 (2010),  105–114
12. Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  265–269
13. Diffuse x-ray scattering from defects in germanium-lithium single crystals
    
    Fizika Tverdogo Tela, 28:12 (1986),  3734–3736
14. MEASUREMENT OF ANGULAR-DISTRIBUTIONS OF THE X-RAY DIFFUSE-SCATTERING ON THE TRIPLE CRYSTAL DIFFRACTOMETER WITH LAUE-CASE DIFFRACTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 55:2 (1985),  391–393
15. Experimental observation of dynamical effects at X-ray diffuse scattering
    
    Fizika Tverdogo Tela, 26:11 (1984),  3445–3447
16. Diffusion scattering distribution near Bragg reflections and its peculiarities at X-ray-diffraction by $\mathrm{Ge}$ single crystals doped with $\mathrm{As}$
    
    Fizika Tverdogo Tela, 26:7 (1984),  2155–2158


17. Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on $c$-sapphire substrates
    
    Fizika Tverdogo Tela, 55:10 (2013),  2058–2066