Mashin Alexandr Ivanovich

Publications in Math-Net.Ru

1. The effect of an electric field on the graphene hydrogenation rate in inductively coupled plasma
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1002–1007
2. Method for forming films of the $\beta$-FeSi$_2$ phase by pulsed laser deposition in vacuum
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  773–778
3. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
4. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
5. Structural modification of pecvd As$_{50}$S$_{50}$ chalcogenide-glass films by femtosecond laser radiation
   
   Optics and Spectroscopy, 124:5 (2018),  706–712
6. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
7. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures
   
   Fizika Tverdogo Tela, 59:5 (2017),  965–971
8. Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  363–366
9. Structure and optical properties of the silver/polyacrylonitrile nanocomposites
   
   Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  80–85
10. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
11. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
12. Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  421–425
13. Characteristics of fullerene-based diode structures on polymer and glass substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  138–141
14. Dielectric properties of Ag/PAN nanocomposites
    
    Zhurnal Tekhnicheskoi Fiziki, 84:7 (2014),  67–71
15. On the role of metal contacts in solar cells based on titanium dioxide and di-(isothiocyanate)-bis-(2,2'-bipyridyl-4,4'-dicarboxylate)ruthenium(II)
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  702–704
16. Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1327–1334
17. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO$_2$
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  460–465
18. Frequency dependence of the electrical conductivity in Ag/PAN nanocomposites
    
    Zhurnal Tekhnicheskoi Fiziki, 82:7 (2012),  69–74
19. Morphology of a silver/polyacrylonitrile nanocomposite
    
    Zhurnal Tekhnicheskoi Fiziki, 81:1 (2011),  95–100
20. Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  747–753
21. The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  57–61
22. Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1552–1558
23. Electric and Optical Properties of the $a$-Si$_{1-x$Ge$_{x}$} Semiconductor
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1288–1291