Rembeza Stanislav Ivanovich

Publications in Math-Net.Ru

1. Amorphous films of ternary zinc and tin oxides for transparent electronics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  73–80
2. Effect of catalytic surface modification on the gas sensitivity of SnO$_2$+3% SiO$_2$ films
   
   Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1273–1277
3. Influence of light on the adsorption processes during interaction between reducer gases and a SnO$_2$ film
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  32–39
4. Synthesis of compositionally different multicomponent metal-oxide films (SnO$_2$)$_x$(ZnO)$_{1-x}$ ($x$ = 1–0.5)
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1147–1151
5. Electrical and gas-sensitive properties of a SnO$_2$-based nanocomposite with multiwalled carbon nanotubes
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1213–1216
6. Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals
   
   Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1611–1616
7. Synthesis, structure and electrical properties of (SnO$_2$)$_x$(In$_2$O$_3$)$_{1-x}$ ($x$ = 0.5–1) nanocomposites
   
   Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1538–1541
8. Electrical and gas-sensitive properties of nanostructured SnO$_2$ : ZrO$_2$ semiconductor films
   
   Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  612–616
9. STUDY OF FUSION AND CRYSTALLIZATION OF ION-IMPLANTED SILICON EFFECTED BY POWERFUL NONCOHERENT EMISSION
   
   Zhurnal Tekhnicheskoi Fiziki, 60:12 (1990),  131–134
10. LOCAL SURFACE MELTING OF ION-IMPLANTED SILICON
    
    Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989),  181–183
11. Электронно-механический резонанс на глубоких центрах в $p^{+}{-}p^{0}{-}\pi{-}n^{0}$-структурах арсенида галлия
    
    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  897–899
12. CONTROL OF PERIOD OF SURFACE RELIEF OF CONDENSED MEDIA
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:14 (1989),  48–52
13. FORMATION OF SURFACE PERIODIC STRUCTURES UNDER THE NONCOHERENT EMISSION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:10 (1989),  55–59
14. Эффекты электрон-фононного взаимодействия в примесной фотопроводимости $n\text{-GaP}\langle\text{Ni}\rangle$
    
    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  485–488
15. Observation of Electron-Mechanical Resonance on Deep Levels in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Implanted by Iron Ions
    
    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1335–1336
16. Dielectric Relaxation Related with Deep Levels in High-Resistance Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2230–2233
17. Internal Friction in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Implanted by Boron Ions
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  913–915
18. Internal friction due to deep levels in polar semiconductors
    
    Fizika Tverdogo Tela, 27:7 (1985),  2081–2085
19. Internal friction in semi-insulated $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 26:7 (1984),  2228–2229
20. Many-phonon light absorption by deep charged impurity centers
    
    Fizika Tverdogo Tela, 25:9 (1983),  2787–2789
21. Состояние примесных атомов Сr и Со в GaP
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  1149–1151