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Publications in Math-Net.Ru
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DLTS investigation of the energy spectrum of Si : Mg crystals
Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 799–804
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Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 433–436
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Interstitial carbon formation in irradiated copper-doped silicon
Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 728–731
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Identification of copper-copper and copper-hydrogen complexes in silicon
Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 239–243
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Annealing kinetics of boron-containing centers in electron-irradiated silicon
Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 192–194
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A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “A statistical method of deep-level transient spectroscopy in semiconductors”
Fizika i Tekhnika Poluprovodnikov, 45:6 (2011), 852–854
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Interaction of copper impurity with radiation defects in silicon doped with boron
Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1017–1020
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Effect of Annealing on Electron-Microscopic Image and DLTS Spectrum of Dislocations in Deformed Silicon
Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 907–910
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