Yakimov Evgeniy Borisovich

Publications in Math-Net.Ru

1. Record thick $\kappa(\varepsilon)$-Ga$_2$O$_3$ epitaxial layers grown on GaN/$c$-sapphire
   
   Zhurnal Tekhnicheskoi Fiziki, 93:3 (2023),  403–408
2. Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  550–553
3. Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  433–436
4. Thermoresistive semiconductor SiC/Si composite material
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  231–234
5. Simulation of the parameters of a titanium-tritide-based beta-voltaic cell
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  101–103
6. Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  59–64
7. Electrical activity of extended defects in multicrystalline silicon
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  266–271
8. Comparative study of the spectral and structural properties of EuAl$_{3}$(BO$_{3}$)$_{4}$ single crystals with different morphologies
   
   Fizika Tverdogo Tela, 59:12 (2017),  2396–2402
9. Physical properties of carbon films obtained by methane pyrolysis in an electric field
   
   Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  110–113
10. MBE-grown AlGaN/GaN heterostructures for UV photodetectors
    
    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  67–73
11. Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1329–1334
12. Study of the properties of silicon-based semiconductor converters for betavoltaic cells
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  763–766
13. Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  758–762
14. Recombination activity of interfaces in multicrystalline silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  741–745
15. EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  737–740
16. Effect of copper on the recombination activity of extended defects in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  732–736
17. Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  149–154
18. Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  195–198
19. Analysis of temperature dependence of capacitance–voltage characteristics for InGaN/GaN multiple quantum well light-emitting structures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1597–1603
20. Calculating the extended defect contrast for the X-ray-beam-induced current method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:20 (2012),  1–7
21. Electrical properties of plastically deformed silicon due to its interaction with an iron impurity
    
    Fizika Tverdogo Tela, 53:6 (2011),  1175–1178
22. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431
23. Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  226–229
24. EBIC study of nonradiative recombination in silicon LEDs with near-band-edge luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1280–1283
25. Изменение свойств приповерхностных слоев кристаллов Cd$_{x}$Hg$_{1-x}$Te под воздействием электронного пучка
    
    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1351–1355
26. Исследование теллурида кадмия методом сканирующей спектроскопии глубоких уровней
    
    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1687–1688
27. Перестройка радиационных дефектов в Si, стимулированная атомарным водородом
    
    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  922–924
28. Effect of Annealing on Electron-Microscopic Image and DLTS Spectrum of Dislocations in Deformed Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  907–910
29. Effect of Hydrogen on the Concentration of Centers with Deep Levels in Cd$_{x}$Hg$_{1-x}$Te Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  915–916
30. Electric properties of superionic conductor $\mathrm{RbAg}_{4}\mathrm{I}_{5}$ doped with $\mathrm{AgS}$
    
    Fizika Tverdogo Tela, 26:12 (1984),  3672–3673
31. Исследование электрических свойств плотных дислокационных рядов
    
    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1313–1315