Tregubova A S

Publications in Math-Net.Ru

1. Fabrication of improved-quality seed crystals for growth of bulk silicon carbide
   
   Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  847–851
2. Use of sublimation epitaxy for obtaining volume 3C-SiC crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  71–77
3. Studying edge luminescence of $n$-3C-SiC epilayers grown on 6H-SiC substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  32–37
4. Silicon carbide irradiated by high neutron closes
   
   Fizika Tverdogo Tela, 33:7 (1991),  2217–2221
5. Motion of surface damage-induced dislocations in $\mathrm{SiC}$
   
   Fizika Tverdogo Tela, 32:8 (1990),  2311–2315
6. Defect formation under the annealing of neutron-irradiated $\mathrm{SiC}$
   
   Fizika Tverdogo Tela, 30:9 (1988),  2606–2610
7. Origination of structural ruptures in epitaxial layers of silicon-carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  641–645