Verbitskaya Elena Mikhailovna

Publications in Math-Net.Ru

1. Megadevices of silicon microelectronics
   
   Fizika Tverdogo Tela, 67:1 (2025),  3–13
2. Charge collection in silicon $p^+$–$n$–$n^+$-structures at temperature 40 mK
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  179–186
3. Drift transport of charge carriers in silicon $p^+$–$n$–$n^+$ structures at temperatures $\le$ 100 mK
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  415–423
4. Physical justification for the time resolution limit of silicon planar detectors of long-range heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  333–340
5. Modern silicon detectors for gamma-ray astrophysics
   
   UFN, 194:4 (2024),  416–431
6. Analysis of $I$–$V$ characteristics of Si diodes irradiated with short-range ions
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1093
7. Influence of irradiation with neutrons on the characteristics of the voltage terminating structure in silicon radiation detectors
   
   Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  971–978
8. The distribution of an electric field in $p$–$n$ junctions of silicon edgeless detectors
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1282–1289
9. Potential distribution in voltage terminating structures with floating $p$–$n$ junction rings of silicon radiation detectors
   
   Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  547–553
10. Deep levels of thermodefects in high-resistance specially pure $n$-type silicon
    
    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1962–1970
11. RADIATION OF PLANAR DETECTOR STRENGTH BASED ON HIGH-OMHIC SILICON
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  69–73
12. Возможности профилирования концентрации тяжелых элементов в тонких ВТСП-пленках на пучках быстрых ионов
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:6 (1992),  91–94
13. К вопросу о спектре глубоких уровней, создаваемых в кремниевых детекторах излучений $\alpha$-частицами
    
    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  852–858
14. Contribution of Silicon Recombination Characteristics into Resolution of Detectors of Short-Path Particles
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1883–1887
15. Charge Transfer in the Structures of Silicon Detectors with the Build-in Field
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1394–1399
16. Impact Ionization in Sharp $p^{+}{-}n$ Junctions under Dynamic Focusing of an Electric Field by the Track of Strongly Ionizing Particle
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1388–1393
17. Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  565–569
18. RESOLUTION OF THE ALPHA-SPECTRUM SUPER-THIN STRUCTURE BY SILICONE PLANAR DETECTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986),  1987–1989
19. Properties of Submicrometer Layers on Pure Germanium Produced by the Ion-Laser Method
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  62–67