Gorbatyuk Andrey Vasil'evich

Publications in Math-Net.Ru

1. Cascade of impedance instabilities of the structure Pd-surface-oxidized-InP
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  6–8
2. Inhomogeneous injection and heat-transfer processes in reversely switched dynistors operating in the pulse-frequency repetition modes with a limited heat sink
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  533–539
3. Redistribution of current and loss of heat in a reversely switched dynistor in the presence of a transverse temperature gradient
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  57–60
4. Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  835–843
5. Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  973–978
6. Simulation modeling of submicrosecond operating conditions for high-voltage reversely switched dynistors
   
   Zhurnal Tekhnicheskoi Fiziki, 85:8 (2015),  94–99
7. An efficient method for reducing the threshold of controlled triggering of fast reversely switched dinistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015),  28–35
8. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
9. Theory and simulation of combined mechanisms limiting the safe operating area of power semiconductor microelectronic switches
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  373–382
10. Effects of current localization in high-power microgate bipolar switches with nonideal interconnection between controlled cells
    
    Zhurnal Tekhnicheskoi Fiziki, 82:5 (2012),  57–65
11. Transient characteristics of reversely switched dynistors in the submicrosecond pulse range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:8 (2012),  81–88
12. Dynamic current localization during turn-off of high-power microgate bipolar switches
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1577–1583
13. Increasing the operating frequency in high-power distributed microgate bipolar switches
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  35–42
14. THERMOGENERATION BREAKDOWN OF DOUBLE INJECTION CHANNEL IN SEMICONDUCTING STRUCTURE
    
    Zhurnal Tekhnicheskoi Fiziki, 61:6 (1991),  83–92
15. DYNAMIC OVERHEATING OF REVERSE-TURN ON DINISTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 60:5 (1990),  129–135
16. MECHANISM OF SPACE-PERIODIC CURRENT STRATIFICATION IN THYRISTORS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:13 (1990),  89–93
17. SPACE-PERIODIC DESTRUCTION OF THYRISTORS IN THE DYNAMIC OVERLOADING MODE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:6 (1989),  42–45
18. INFLUENCE OF ELECTRODYNAMIC EFFECTS ON THE HOMOGENEITY OF COMMUTATION PROCESSES IN HIGH-SPEED POWERFUL SEMICONDUCTOR-DEVICES
    
    Zhurnal Tekhnicheskoi Fiziki, 56:9 (1986),  1860–1861
19. Hydrostatic pinch effect on the lifetime of charge nonequilibrium carriers in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:21 (1985),  1288–1293
20. POWERFUL SWITCH OF MICROSECOND RANGE - REVERSIBLY SWITCHING ON DINISTOR
    
    Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983),  1822–1826
21. Транзисторный эффект в двухполюсной $n^{+}pNn^{+}$-структуре при ее импульсном инжекционном возбуждении
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1271–1275
22. Инжекционно-лавинный механизм запуска реверсивно-включаемых динисторов в субмикросекундном диапазоне
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1217–1221
23. Новый быстродействующий мощный переключатель — инжекционно-полевой тиристор (ИПТ)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:1 (1983),  18–21