Evstropov Valery Victorovich

Publications in Math-Net.Ru

1. Влияние параметров $p$–$n$-переходов на оптимизацию конструкции контактов в фотоэлектрических преобразователях лазерного излучения
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026),  8–11
2. Photoelectric laser radiation converter $\lambda$ = 1064 nm based on GaInAsP/InP
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  447–451
3. Photovoltaic converters resistive parameters effect on its IV-curves and electroluminescence maps
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  281–285
4. Determination of imbalance of photogenerated currents in multijunction photoconverters of laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  219–222
5. Electroluminescence of leds with quantum wells at high and low-level injection
   
   Optics and Spectroscopy, 132:12 (2024),  1214–1218
6. Three-parameter tube model of current spreading in solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  573–576
7. Current invariant as a method of searching for the optimum band gap of subcells of multijunction solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  32–34
8. Effect of temperature on current through various recombination channels in GaAs solar cells with GaInAs quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  700–705
9. Influence of photogenerated currents imbalance on current-voltage characteristics of multijunction solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  38–41
10. A GaInP-based photo-converter of laser radiation with an efficiency of 46.7% at a wavelength of 600 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  24–26
11. Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  51–54
12. The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  30–33
13. Finding the energy gap of Ga$_{1-x}$In$_{x}$As $p$–$n$ junctions on a metamorphic buffer from the photocurrent spectrum
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  29–31
14. Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1568–1572
15. Anomalies in photovoltaic characteristics of multijunction solar cells at ultrahigh solar light concentrations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  37–39
16. Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1126–1130
17. On current spreading in solar cells: a two-parameter tube model
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  987–992
18. Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  682–687
19. Electrical properties of Pd-oxide-InP structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  376–378
20. Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments
    
    Zhurnal Tekhnicheskoi Fiziki, 84:6 (2014),  92–97
21. Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  671–676
22. Photoelectric determination of the series resistance of multijunction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1074–1081
23. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1568–1576
24. Photoluminescence of compensated SiC-6H
    
    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  969–978
25. Возникновение туннельного тока в структурах металл$-$полупроводник после воздействия лазерного излучения
    
    Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1774–1779
26. Разновидность неклассического термоинжекционного тока в карбид-кремниевых $p{-}n$-структурах
    
    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1813–1818
27. Неклассический термоинжекционный ток в карбид-кремниевых $p{-}n$-структурах
    
    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  647–651
28. Interface Luminescence of $n$-GaAs/$n$-GaAlAs Heterostructure Produced by Liquid Epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1313–1317
29. Nonclassical Thermoinjection Current in InAsSbP/lnAs $p{-}n$ Structures
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  762–765
30. Обратные токи в $p{-}n$-гетероструктурах InGaAsP/InP
    
    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2036–2040
31. Ток, обусловленный рекомбинацией через многоуровневый центр в слое объемного заряда $p{-}n$-структуры
    
    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1852–1858
32. Влияние несоответствия параметров решеток на $I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур
    
    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1413–1416
33. Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1034–1038
34. Rate of Recombination via Multilevel (Multiply Charged) Center
    
    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  902–912
35. Неклассический термоинжекционный ток в GaP $p{-}n$-структурах
    
    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  599–606