Rebane Yury Toomasovich

Publications in Math-Net.Ru

1. On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  711–716
2. Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels
   
   Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1714–1719
3. Hopping transport in the space-charge region of $p$–$n$ structures with InGaN/GaN QWs as a source of excess $1/f$ noise and efficiency droop in LEDs
   
   Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  847–855
4. Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1107–1116
5. Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  129–136
6. Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
   
   Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1054–1062
7. Mechanism of the GaN LED efficiency falloff with increasing current
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  822–828
8. Classification of dislocation-related luminescence lines in silicon
   
   Fizika Tverdogo Tela, 34:5 (1992),  1513–1521
9. One-dimensional dislocation-related exciton in germanium
   
   Fizika Tverdogo Tela, 32:9 (1990),  2778–2781
10. Dislocation-related exciton line splitting in crystals with nonequilibrium dislocations
    
    Fizika Tverdogo Tela, 32:9 (1990),  2774–2777
11. Энергетический спектр многозарядных примесных центров в кубических полупроводниках
    
    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1193–1198
12. EHect of Hole Drag by Light under Рhotoionization of Deep Acceptors in Cubic Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  726–729
13. Linear polarization anisotropy of hot photoluminescence in $p$-$\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 27:9 (1985),  2650–2657
14. Semiconductor and dielectric energy band reconstruction in a field of intensive weak-selfabsorbing light waves
    
    Fizika Tverdogo Tela, 27:5 (1985),  1364–1368
15. Ionization Potentials of Multicharge Deep Impurities in Cubic Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  96–100
16. Oscillator strength sum rules for free hole inter and intraband transitions in cubic semiconductors
    
    Fizika Tverdogo Tela, 25:6 (1983),  1894–1896