Shmatov A A

Publications in Math-Net.Ru

1. On the correlation function in relaxation spectroscopy of deep level
   
   Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  473–476
2. Intercenter carrier transitions in partially disordered silicon: experiment and discussion of results
   
   Fizika Tverdogo Tela, 31:11 (1989),  206–213
3. Intercenter carrier transitions in partially disordered silicon: calculation
   
   Fizika Tverdogo Tela, 31:11 (1989),  197–205
4. Емкостная спектроскопия глубоких уровней облученных твердых растворов германий$-$кремний
   
   Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1869–1873
5. CERTAIN CAUSES OF INSTABILITY OF GAP-N LIGHTDIODES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1710–1716
6. To the Problem on the Measurement of Capacity Relaxation in the Spectroscopy of Deep Levels
   
   Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  653–656
7. Transformation of Deep Centers during Degradation of GaP$\langle$N, Zn$-$O$\rangle$ Light-Emitting Diodes
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  701–707
8. Study of Spin-Dependent Recombination in the Films of Silicon on Sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  869–873
9. Спин-зависимая генерация неравновесных носителей заряда
   
   Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1552–1555