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Astrova Ekaterina Vladimirovna

Publications in Math-Net.Ru

  1. Electrochemical performance of LIB anodes based on silicon monoxide: the effect of disproportionation and treatment in HF

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  14–17
  2. Dependence of the electrochemical parameters of composite SiO/C anodes for lithium-ion batteries on the composition and synthesis temperature

    Zhurnal Tekhnicheskoi Fiziki, 92:3 (2022),  421–434
  3. Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries

    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1381–1392
  4. Formation of silicon nanoclusters upon disproportionation of silicon monoxide

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  373–387
  5. Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  753–765
  6. Impedance spectroscopy of porous silicon and silicon-carbon anodes produced by sintering

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  310–318
  7. The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  14–18
  8. Negative electrodes for lithium-ion batteries obtained by photoanodization of solar-grade silicon

    Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  711–716
  9. Formation of porous silicon by nanopowder sintering

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  540–549
  10. Photoanodization of $n$-Si in the presence of hydrogen peroxide: voltage dependence

    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  119–131
  11. Electrochemical amorphization as a method to increase the rate capability of crystalline silicon anodes for lithium-ion batteries

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019),  16–20
  12. Fluorocarbon carbonization of nanocrystalline silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  29–32
  13. Influence of hydrogen peroxide on the photoanodization of $n$-Si in the breakdown mode

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1614–1624
  14. Formation of macropores in $n$-Si upon anodization in an organic electrolyte

    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  414–430
  15. Characteristic properties of macroporous silicon sintering in an argon atmosphere

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1213–1222
  16. High-temperature annealing of macroporous silicon in an inert-gas flow

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1202–1212
  17. Anodes for Li-ion batteries based on $p$-Si with self-organized macropores

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  79–88
  18. Electrochemical lithiation of silicon with varied crystallographic orientation

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  979–986
  19. Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  279–286
  20. Structure and composition of silicon microarrays subjected to cyclic insertion and extraction of lithium

    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  52–61
  21. Anisotropic shaping of macroporous silicon

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  561–568
  22. Structural transformation of macroporous silicon anodes as a result of cyclic lithiation processes

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1288–1294
  23. Zigzag structures obtained by anisotropic etching of macroporous silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  17–24
  24. Fabrication technology of heterojunctions in the lattice of a 2D photonic crystal based on macroporous silicon

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1136–1143
  25. Porous silicon based negative electrodes for lithium ion batteries

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011),  87–94
  26. Portable power source based on air-hydrogen fuel cells with free-breathing cathodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:9 (2011),  45–54
  27. Formation of 2D photonic crystal bars by simultaneous photoelectrochemical etching of trenches and macropores in silicon

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1666–1672
  28. Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  986–994
  29. Humidity-independent portable air-hydrogen fuel cells with slotted silicon based gas-distributing plates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  1–9
  30. Air-hydrogen fuel cell with two-level slotted silicon-based electrode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:10 (2010),  1–8
  31. NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER SOLID-PHASE DIRECT SILICON BONDING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992),  51–56
  32. Влияние изовалентного легирования индием на свойства эпитаксиальных слоев арсенида галлия, выращенного из газовой фазы

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  898–903
  33. Новый способ обработки спектров DLTS

    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  549–552
  34. HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  1–4
  35. SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE HIGHER-THAN-20-KV

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  972–975
  36. Effect of Deep Levels on Breakdown Voltage of Diodes

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2122–2125
  37. Capacity Spectroscopy of Deep Levels in Semiconductors under Photothermal Emission of Charge Carriers

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  683–686
  38. Study of Thermal Defects in High-Resistance $n$-Type Si

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1709–1711
  39. Effect of Series Resistance of a Diode on Unsteady Capacitance Measurements of Deep-Level Parameters

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1382–1385
  40. Capacitance Measurements of Deep-Impurity Distribution Profile and Surface Concentration in Thin Doped Layers

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1375–1381
  41. Capacitance and Photoelectric Spectroscopy of Thallium Levels in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1273–1276
  42. Photoconduction of Selenium-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  919–922
  43. Capacity Spectroscopy of Deep Levels in $n$-Si(Cr)

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  917–919
  44. Energy Levels of Selenium in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  597–600

© Steklov Math. Inst. of RAS, 2026