Kosyachenko L A

Publications in Math-Net.Ru

1. Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se$_{2}$ thin-film solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  515–524
2. Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  907–915
3. Absorptivity of semiconductors used in the production of solar cell panels
   
   Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  482–486
4. Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and $\gamma$-ray detectors
   
   Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  389–395
5. Band gap of CdTe and Cd$_{0.9}$Zn$_{0.1}$Te crystals
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1323–1330
6. Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell
   
   Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1422–1429
7. Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  729–734
8. Нахождение закона дисперсии в запрещенной зоне полупроводника из измерений туннельного обратного тока в диоде Шоттки
   
   Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1852–1855
9. Механизм прохождения прямого тока в электролюминесцентных диодах Au$-$ZnS
   
   Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1651–1656
10. PROPERTIES OF THE SCINTILLATOR-PHOTODIODE SYSTEM BASED ON THE SELENIDE ZINC TELLURIDE STRUCTURE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  702–705
11. Tunneling in Gallium-Phosphide Schottky Diodes
    
    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  2087–2090
12. Radiative Recombination on Donor-Acceptor Pairs in the Space-Charge Region of Au-ZnS Diodes
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  619–624
13. Hot luminescence of a silicon bipolar-transistor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1437–1440
14. RADIATION OF LIGHT BY METAL DURING DIRECT DISPLACEMENT OF A SCHOTTKY DIODE
    
    Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1185–1186
15. Влияние закона дисперсии на туннелирование носителей в CdTe-диодах
    
    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1285–1287
16. Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  426–430
17. Влияние одноосной деформации на свойства карбид-кремниевых диодов Шоттки
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1935–1937