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Publications in Math-Net.Ru
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Pulsed magnetic field-induced indium migration in $\mathrm{CdHgTe}$
Fizika Tverdogo Tela, 34:10 (1992), 3264–3265
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Влияние условий измерений на аномальный эффект Холла в $p$-InAs
Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1999–2002
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Рекомбинационные процессы в радиационно облученных фоточувствительных
структурах на основе селенида галлия
Fizika i Tekhnika Poluprovodnikov, 23:1 (1989), 152–155
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Recombination in Si after Thermal Treatment and $\gamma$-Irradiation
Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 2082–2084
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Electrophysical and Photoelectric Characteristics of $p{-}n$ Junctions Produced by Beryllium Implantation into GaAs$_{1-x}$P$_{x}$
Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1901–1904
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Electrophysical Properties of $n$-Туре Indium-Antimonide Irradiated by Fast Electrons
Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1787–1790
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Temperature Dependence of Photoluminescence Spectra of GaSe Single Crystals Irradiated by $\gamma$ Quanta
Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 613–618
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On the Diffusion Character of Radiational Degradation
of Photoconducting Lead-Sulphide Films
Fizika i Tekhnika Poluprovodnikov, 19:11 (1985), 2088–2091
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Component and impurity migration mechanisms in $\mathrm{Cd}_{0.2}\mathrm{Hg}_{0.8}\mathrm{Te}$
Fizika Tverdogo Tela, 26:11 (1984), 3233–3239
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Component and impurity diffusion in $\mathrm{Cd}_{x}\mathrm{Hg}_{1-x}\mathrm{Te}(x=0.2)$
Fizika Tverdogo Tela, 26:10 (1984), 2960–2967
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Позитронная аннигиляция в облученных кристаллах
CdHgTe
Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 1970–1974
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Electric Properties of Bi$_{2-x}$Sb$_x$Te$_3$ PolycrystalHne Films
under $\gamma$ Irradiation
Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1095–1098
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Indium migration in $\mathrm{Cd}_{x}\mathrm{Hg}_{1-x}\mathrm{Te}$
Fizika Tverdogo Tela, 25:9 (1983), 2662–2666
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Магнитная восприимчивость кремния, легированного гадолинием
Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1490–1492
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