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Il'ichev E A

Publications in Math-Net.Ru

  1. The cascade matrix electron flow amplifier based on an electron multiplier concentrator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:7 (2023),  43–46
  2. Calculation and optimization of the limiting characteristics of a single-channel dual-spectrum image receiver of objects emitting in the ultraviolet range

    Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022),  1449–1459
  3. An investigation of reading thermal images processes by a thermal image receiver made in the image intensifier tube architecture

    Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  649–659
  4. The thermal image receiver realized in the Image intensifier tube architecture

    Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022),  507–519
  5. Diamond photocathodes as field-emission electrodes for vacuum microelectronics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021),  3–6
  6. Characteristics of solar-blind electron-optical converters with diamond photocathodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021),  3–6
  7. Studying the transparency of graphene for low-energy electrons

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  94–102
  8. The photoemissive cell of a vacuum ultraviolet radiation detector array

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  48–55
  9. Electrical instability against thermal injection in multibarrier heterostructures: Theoretical model and experimental data

    Zhurnal Tekhnicheskoi Fiziki, 85:7 (2015),  83–86
  10. Design and investigation of UV image detectors

    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  74–82
  11. Field-emission diodes based on semiconductor–polycrystalline diamond heterojunctions

    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  112–116
  12. Method for the formation of graphene films

    Zhurnal Tekhnicheskoi Fiziki, 84:7 (2014),  62–66
  13. Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers

    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  481–486
  14. Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:2 (2014),  10–15
  15. The use of graphene in vacuum micro- and nanoelectronics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  25–31
  16. Solid-state field-emission diode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013),  46–52
  17. Electron flux amplifier on diamond-coated silicon grating

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  45–51
  18. Mask for micropattern formation on diamond films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  49–55
  19. Vacuum field-emission triode based on electron multiplier concentrator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  15–20
  20. Catalytic growth of nanostructures from carbonaceous substrates: Properties and model notions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:4 (2010),  48–53
  21. Electron multiplier concentrator for integrated field-emission electronics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  44–51
  22. Substrate parasite control in field-effect transistors on gallium arsenide

    Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  794–800
  23. Частотная дисперсия крутизны в полевых транзисторах на основе $\delta$-легированных структур

    Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1870–1876
  24. Температурная зависимость эффекта управления транзистором через полуизолирующую подложку в интегральных схемах на арсениде галлия

    Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1667–1670
  25. EFFECT OF SCHOTTKY-BARRIER PROPERTIES ON FREQUENCY DISPERSION OF TRANSCONDUCTANCE OF FIELD TRANSISTOR WITH SCHOTTKY-BARRIER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991),  78–80
  26. MECHANISMS OF PARASITIC CONTROL ON SUBSTRATE IN GAAS FIELD SCHOTTKY TRANSISTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991),  36–38
  27. Физическая модель эффекта управления полевым транзистором через полуизолирующую подложку

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2111–2116
  28. Гетеропереход $n$-GaAs$-$ZnS в МДП приборах. II. Транзисторы с изолированным затвором

    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  978–981
  29. Гетеропереход $n$-GaAs$-$ZnS в МДП приборах. I. Электрофизические свойства гетероперехода

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  788–794
  30. CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS METHOD

    Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2245–2247
  31. Modulation of Negative Space Charge in the Insulator–Semiconductor Structures Produced in a GaAs$-$AlAs System

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1782–1786
  32. Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method

    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1565–1571
  33. Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  757–759
  34. Electrophysical Properties of Ga$_{1-x}$Al$_x$As Solid-Solution Insulating Layers Produced by MOS Hydride Method

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  594–602
  35. FIELD TRANSISTOR WITH INSULATED SEALS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  420–422

© Steklov Math. Inst. of RAS, 2026