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Mezdrogina Margarita Mikhailovna

Publications in Math-Net.Ru

  1. LED structures based on ZnO films obtained by RF magnetron sputtering for the UV spectral range

    Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020),  456–461
  2. Parameters of ZnO semiconductor films doped with Mn and Fe 3$d$ impurities

    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  18–21
  3. Growth and structural, magnetic, and magnetooptical properties of ZnO films doped with a Fe$^{57}$ 3$d$ impurity

    Fizika Tverdogo Tela, 60:3 (2018),  596–602
  4. Influence of silver and gold nanoparticles and thin layers on charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline zinc oxide films

    Zhurnal Tekhnicheskoi Fiziki, 88:4 (2018),  566–571
  5. Formation of luminescence spectra and emission intensity in the UV and visible spectral regions for $n$-ZnO/$p$-GaN and $n$-ZnO/$p$-ZnO structures when depositing ZnO films by high-frequency magnetron sputtering

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1115–1119
  6. Parameters of ZnO films with $p$-type conductivity deposited by high-frequency magnetron sputtering

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  588–593
  7. UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1325–1332
  8. Photoinduced defects in $a$-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm

    Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015),  97–104
  9. Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1521–1530
  10. Emission intensity of the $\lambda$ = 1.54 $\mu$m line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1016–1023
  11. Influence of the magnetic field strength and excitation intensity on the shape of microphotoluminescence spectra of quantum-well structures based on GaN/InGaN doped with Sm and Eu+Sm

    Fizika Tverdogo Tela, 55:5 (2013),  962–967
  12. Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1204–1209
  13. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  480–489
  14. Photoluminescence spectra of intracenter 4$f$ transitions of rare-earth metal dopants in crystalline ZnO films

    Fizika Tverdogo Tela, 54:6 (2012),  1155–1163
  15. Influence of nanoparticles and thin layers of gold, europium phthalocyanine, and erbium nanoparticles on the formation of luminescence spectra of structures with InGaN/GaN quantum wells

    Fizika Tverdogo Tela, 54:1 (2012),  182–188
  16. Intensity of emission from intracenter 4$f$-transitions in $a$-Si:H, ZnO, and GaN films doped with rare-earth ions

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  925–936
  17. Influence of the magnetic field and measurement temperature on the shape of microphotoluminescence spectra of Eu-Doped InGaN/GaN quantum-well structures

    Fizika Tverdogo Tela, 53:8 (2011),  1596–1603
  18. Setup for taking the radiation spectra of wideband semiconductors

    Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011),  77–81
  19. Photoluminescence of nitro-substituted europium (III) phthalocyanines

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1104–1107
  20. The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  445–451
  21. Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm)

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  338–345
  22. PARAMETERS OF PHOTOTRANSDUCERS BASED ON FILMS OF AMORPHOUS HYDRATED SILICONE OBTAINED IN THE TETRODE SYSTEM

    Zhurnal Tekhnicheskoi Fiziki, 62:1 (1992),  108–112
  23. Structural net of boron-doped $\alpha$-Si : H and hole transport

    Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  960–962
  24. Photoconduction and state density of boron-doped amorphous hydrogenated silicon

    Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  66–70
  25. Плотность состояний хвоста валентной зоны и фотопроводимость аморфного гидрированного кремния

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1448–1450
  26. Удельные сдвиги носителей тока и плотность состояний аморфного гидрированного кремния

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  551–553
  27. Исследование фотопроводимости аморфного гидрированного кремния методом видикона

    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  170–171
  28. Плотность состояний и перенос дырок в аморфном гидрированном кремнии

    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  102–105
  29. Mechanism of the anomalous spectral behavior of optical absorption in amorphous silicon

    Fizika Tverdogo Tela, 32:5 (1990),  1515–1517
  30. Удельные сдвиги носителей заряда и фотопроводимость аморфного гидрированного кремния

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1190–1193
  31. PHOTOSENSITIVITY OF P-I-N-STRUCTURES AND STRUCTURES WITH SCHOTTKY-BARRIER BASED ON A-SI-H IN THE UV EMISSION DOMAIN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:1 (1990),  47–50
  32. Эффект псевдолегирования аморфного кремния

    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1737–1740
  33. Примесные центры диспрозия в аморфном гидрогенизированном кремнии

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1552–1555
  34. Структурная сетка, уровень Ферми и плотность состояний аморфного кремния

    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  450–455
  35. TARGETS OF VIDICON BASED ON AMORPHOUS HYDROGENATED SILICONE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:4 (1989),  85–87
  36. Легирование железом аморфного гидрогенизированного углерода

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1856–1859
  37. Электрофизические свойства контактов с барьером Шоттки на аморфном гидрированном кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  461–464
  38. Природа примесных состояний, образуемых переходными металлами (железом и европием) в аморфном гидрированном кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  161–164
  39. On the Doping of Amorphous Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1464–1466
  40. Mossbauer study of the iron impurity atoms in amorphous silicon

    Fizika Tverdogo Tela, 28:8 (1986),  2543–2546
  41. State Density of Hydrogenated Amorphous Silicon

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1912–1914
  42. Influence of the temperature anneal on characteristics of solar elements with Schottky-barrier based on the amorphous hydrogenated silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  28–31
  43. Плотность состояний и фотопроводимость аморфного кремния

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1897–1899
  44. On the Nature of Dark Currents in the Structures with Schottky Barriers Hydrogenated Silicon

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  373–376
  45. О механизме проводимости аморфного кремния при гидрировании

    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1255–1258

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