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Voronkov Vladimir Borisovich

Publications in Math-Net.Ru

  1. Formation of porous silicon by nanopowder sintering

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  540–549
  2. Fluorocarbon carbonization of nanocrystalline silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  29–32
  3. Characteristic properties of macroporous silicon sintering in an argon atmosphere

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1213–1222
  4. High-temperature annealing of macroporous silicon in an inert-gas flow

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1202–1212
  5. Anodes for Li-ion batteries based on $p$-Si with self-organized macropores

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  79–88
  6. On the mechanism of divacancy annealing in proton irradiated silicon

    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1507–1509
  7. NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER SOLID-PHASE DIRECT SILICON BONDING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992),  51–56
  8. CONTROL OF VOLUME LIFE TIME AND THE VELOCITY OF SURFACE RECOMBINATION OF CHARGE-CARRIERS IN SEMICONDUCTORS BY INFRARED-LASER SOUNDING TECHNIQUE

    Zhurnal Tekhnicheskoi Fiziki, 61:2 (1991),  104–108
  9. Контроль качества интерфейса методом лазерного сканирования при прямом сращивании кремниевых пластин

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  208–216
  10. Влияние электрического поля на профиль концентрации радиационных дефектов в кремнии, облученном электронами с энергией вблизи порога дефектообразования

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1213–1215
  11. CONDUCTING OF DIRECT SILICON FUSION UNDER NON-DUST-FREE AIR MEDIA

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:17 (1990),  61–65
  12. STRAIGHT-LINE OF DIODES PREPARED BY THE SDB (SILICON TO SILICON DIRECT BONDING) METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  6–9
  13. HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  1–4
  14. Скорость введения и профиль концентрации $A$-центров в $n$-кремнии, облученном электронами с энергией вблизи порога дефектообразования

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  753–756
  15. FORMING OF R-P TRANSITIONS BY THE SILICON TO SILICON DIRECT BONDING METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989),  59–63
  16. FORMATION AND ANNEALING OF RADIATION DEFECTS IN SILICON P-N DIODES WITH LITHIUM ADMIXTURE

    Zhurnal Tekhnicheskoi Fiziki, 58:7 (1988),  1436–1439
  17. PASSIVATING PROPERTIES OF SILICON-OXIDES APPLIED ON THE SURFACE OF SILICON HIGH-VOLTAGE P-N TRANSITIONS BY THE CATHODE-REACTIVE SPUTTERING

    Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988),  132–135
  18. SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE HIGHER-THAN-20-KV

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  972–975
  19. OPTIMIZATION OF FREQUENCY AND STATISTIC CHARACTERISTICS OF POWER SEMICONDUCTING DEVICES BY CREATION OF HIGH RECOMBINATION LOCAL ZONES IN BASIC FIELDS

    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  1925–1929
  20. POTENTIALITY OF PREPARATION OF LOW-OMHIM NEITRON-ALLOYED SILICON ON THE RBMK-1000 REACTOR

    Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1127–1129
  21. On the Energy Levels of a Divacancy in Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  140–144
  22. NEUTRON-ALLOYED HIGH-RESISTANT SILICON (NAS) - PRODUCTION AND PROPERTIES

    Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1174–1179
  23. Effect of Deep Levels on Breakdown Voltage of Diodes

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2122–2125
  24. On the Nature of Recombination Centers in $p$-Type Silicon Irradiated by $\gamma$-Quanta

    Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1100–1102
  25. HEAVY-CURRENT MICROSECOND THYRISTOR COMMUTATOR CONTROLLED BY LIGHT-PULSES

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1570–1575
  26. Study of Thermal Defects in High-Resistance $n$-Type Si

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1709–1711
  27. POSSIBILITIES OF INCREASING THERMAL-STABILITY OF SINGLE-CRYSTAL SILICON FOR HIGH-POWER SEMICONDUCTOR-DEVICES

    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  917–928
  28. THERMAL-STABILITY OF SILICON, ALLOYED BY REE ADMIXTURES DURING GROWTH BY THE CHOKHRALSKII METHOD

    Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984),  207–208
  29. SUPERHIGH-VOLT P-N-JUNCTIONS BASED ON NEUTRON-ALLOYED SILICON, CONTAINING RARE-EARTH ELEMENTS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  880–882
  30. Фото-ЭПР кремния, легированного железом, в обратно смещенном $p{-}n$-переходе

    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1344–1347

© Steklov Math. Inst. of RAS, 2026