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Klyachkin Leonid Efimovich

Publications in Math-Net.Ru

  1. Nano-electromagnets based on hybrid SiC/Si nanostructures

    Fizika Tverdogo Tela, 67:8 (2025),  1432–1436
  2. Andreev terahertz irradiation generators

    Fizika Tverdogo Tela, 66:11 (2024),  2052–2058
  3. Express diagnostics of DNA oligonucleotides

    Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024),  1597–1602
  4. Macroscopic quantum phenomena under conditions of deposition of DNA oligonucleotides into the edge channels of a silicon nanosandwich structure

    Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024),  1588–1596
  5. Control of the blood oxygenation process under the effect of THz radiation

    Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024),  1583–1587
  6. Using terahertz irradiation to mitigate the effects of radiation exposure

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  1087–1094
  7. Magnetic properties of edge channels of silicon nanosandwich structures with deposited DNA oligonucleotides

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  963–967
  8. Therapy of covid complications with terahertz irradiation

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  943–950
  9. Terahertz express diagnostics of complications caused by COVID-19

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  939–942
  10. Registration of terahertz radiation with silicon carbide nanostructures

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1195–1202
  11. Terahertz emission from silicon carbide nanostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1027–1033
  12. Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  103–111
  13. Terahertz radiation sources and detectors based on optical microcavities embedded in the edge channels of silicon nanosandwiches

    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1663–1671
  14. Terahertz response of biological tissue for diagnostic and treatment in personalized medicine

    Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020),  1502–1505
  15. Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  512
  16. High temperature quantum kinetic effects in silicon nanosandwiches

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  473
  17. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1353–1357
  18. Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1230–1237
  19. Room temperature de Haas–van Alphen effect in silicon nanosandwiches

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1047–1054
  20. Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  474–484
  21. Defect-related luminescence in silicon $p^+$–$n$ junctions

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1258–1261
  22. DNA detection by THz pumping

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  966–970
  23. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  663–671
  24. Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on $n$-Si (100)

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1646–1653
  25. Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1549–1554
  26. Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1503–1516
  27. Features of the electroluminescence spectra of quantum-confined silicon $p^+$–$n$ heterojunctions in the infrared spectral region

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1530–1535
  28. On the electrically detected cyclotron resonance of holes in silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  503–509
  29. Infrared luminescence from silicon nanostructures heavily doped with boron

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  289–303
  30. The de Haas-van Alphen effect in nanostructures of cadmium fluoride

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  90–95
  31. Spin interference of holes in silicon nanosandwiches

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  77–89
  32. Shubnikov–de-Haas and de-Haas–van-Alphen oscillations in silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1503–1508
  33. Quantum spin Hall effect in nanostructures based on cadmium fluoride

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1372–1381
  34. Gettering in silicon under vacancy generation

    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1004–1007
  35. Туннельные эффекты в двумерной кремниевой транзисторной структуре

    Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1613–1617
  36. Фрактально-диффузионные $p{-}n$-переходы в кремнии

    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  644–654
  37. TUNNEL EFFECTS IN QUANTUM-DIMENSIONAL SILICON TRANSISTOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  42–46
  38. Генерация и отжиг дефектов при совмещенном геттерировании в кремнии $n$-типа. II. Точечные дефекты, индуцированные геттерирующими микродефектами

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1563–1573
  39. Генерация и отжиг дефектов при совмещенном генерировании в кремнии $n$-типа. I. Геттерирующие микродефекты

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1557–1562
  40. Четный магнитный фотоэффект в структурах с $p{-}n$-переходом цилиндрической формы

    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  485–487
  41. CRITERIA OF OPTIMAL CLARIFICATION OF AN OPTIC-SYSTEM OF AIR-SIOX-POLYCRYSTALLINE-SI-MONOCRYSTALLINE-SI IN THE SPECTRAL REGION 550-950-NM

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  823–826
  42. Study of the effect of oxides and polycrystal layers on the carrier life-span in monocrystal silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1025–1029
  43. INVESTIGATION OF THE THIN SIOX(O-GREATER-THAN-OR-EQUAL-TO-X-GREATER-THAN-OR-EQUAL-TO-2) FILMS ON SPECTRAL CHARACTERISTICS OF SILICON P-N TRANSITIONS

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2191–2195
  44. Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  668–673
  45. Photoelectric characteristics of the $Si\,O_{x}$ ($1\leqslant x \leqslant 2$)-polycrystal $Si-Ge$ system

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985),  675–679
  46. Spectral characteristics of selective photo-detectors for the visible and ultraviolet-spectrum area

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985),  354–358
  47. Correction

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2232
  48. Исследование вольтамперных характеристик $p{-}n$-переходов поликристаллический кремний–монокристаллический кремний

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1648–1651

© Steklov Math. Inst. of RAS, 2026