|
|
Publications in Math-Net.Ru
-
Growing bulk aluminum nitride and gallium nitride crystals by the sublimation sandwich method
Fizika Tverdogo Tela, 61:12 (2019), 2298–2302
-
Raman scattering in AlN crystals grown by sublimation on SiC è AlN seeds
Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1593–1596
-
Raman spectra of thick epitaxial GaN layers formed on SiC by the sublimation sandwich method
Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1104–1106
-
Dependence of the AlN-Layer growth rate on source-substrate clearance for the sublimation growth method
Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1570–1572
-
Comparison of the homoepitaxial growth of AlN crystals on Al and N surfaces
Fizika i Tekhnika Poluprovodnikov, 45:11 (2011), 1576–1578
-
Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals
Fizika i Tekhnika Poluprovodnikov, 44:10 (2010), 1430–1432
-
Effective green light-emitting diodes on silicon carbide
Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 107–110
-
SIC(SC)-BASED INJECTION-TRANSIT STRUCTURE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989), 43–46
-
CATHODE AMPLIFICATION IN P-N TRANSITIONS ON SILICON-CARBIDE
Zhurnal Tekhnicheskoi Fiziki, 57:12 (1987), 2405–2407
-
Origination of structural ruptures in epitaxial layers of silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645
-
Cathodoamplification in Schottky barriers on silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986), 1464–1468
© , 2026