Karandashov Sergey Arkad'evich

Publications in Math-Net.Ru

1. Радиационная стойкость датчиков МНПВО на основе двойных гетероструктур $p$-InAsSbP/$n$-InAs, облученных гамма-квантами
   
   Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  112–121
2. Инфракрасный сенсор углекислого газа на основе свето- и фотодиодов из твердых растворов InAsSb(P)
   
   Optics and Spectroscopy, 133:11 (2025),  1168–1171
3. On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  42–52
4. On-chip ATR sensor ($\lambda$ = 3.4 $\mu$m) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions
   
   Optics and Spectroscopy, 130:8 (2022),  1223–1228
5. On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance
   
   Optics and Spectroscopy, 129:9 (2021),  1193–1197
6. Indium arsenide-based spontaneous emission sources (review: a decade later)
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  147–157
7. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths
   
   Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
8. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
9. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
10. Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes
    
    Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  52–57
11. $P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1394–1397
12. Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  45–52
13. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  708–713
14. Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  258–261
15. Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  85–90
16. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  554–559
17. Nature of threshold current-density temperature dependence for long-wavelenght lasers based on InAsSbP/InAs and InAsSbP/InAsSb double heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  246–256
18. INASSBP-BASED LIGHT DIODES USED IN SMALL-SCALE ANALYZERS OF CARBON OXIDE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991),  75–79
19. Температурная зависимость люминесценции арсенида индия и твердых растворов InAsSbP и InGaAs
    
    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  592–596
20. LOW-THRESHOLD LASERS OF 3-3,5 MU-M BASED ON DHS INASSBP/IN1-XGAXAS1-YSBY
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  49–52
21. STIMULATED EMISSION (3-3.3 MU-M, 77-K) UNDER THE CURRENT INJECTION IN PLASTICALLY DEFORMED DHS INASSBP/INAS LASERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1617–1621
22. Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As (${0 < x < 0.23}$)
    
    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1079–1084
23. Injection coherent emission in $In\,As\,Sb\,P/In\,As/In\,As\,Sb\,P$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  563–565
24. Temperature-dependence of parameters of stimulated radiation in R-P structures based on $In\,As_{1-x}\,Sb_{x}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  329–331
25. Coherent irradiation of 3,9-mu-m in R-P structures based on $Jn\,As\,Sb\,P$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1444–1447
26. Структура металл–полупроводник на основе $p$-InAs
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  991–996