Guroshev V I

Publications in Math-Net.Ru

1. Влияние облучения быстрыми нейтронами на люминесценцию арсенида галлия
   
   Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  82–87
2. Понижение термической стабильности комплексов $V_{\text{As}}$Zn$_{\text{Ga}}$ в GaAs при нейтронном облучении
   
   Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1363–1366
3. ${h\nu_{m}\simeq 1.2}$ eV Luminescence Band in $p$-Type GaAs Stimulated by Radiationally-Thermal Effect
   
   Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1659–1663
4. Effect of Fast-Electron Irradiation on the Luminescence of $p$-Type GaAs (Si) Heavily Doped and Compensated Layers
   
   Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1874–1877
5. Interaction of Radiation-Induced Defects with Chromium Atoms in Gallium Arsenide
   
   Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  567–569
6. Variation of Maximum Position and Half width of Luminescence Band due to Radiative Recombination in $V_{\text{Ga}}$Te$_{\text{As}}$ Complexes under Electron Irradiation of GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1326–1328
7. Increase of Concentration of Luminescence-Quenching Centers under the Annealing of Electron-Irradiated Gallium-Arsenide Crystals
   
   Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1163–1164