Talalaev Vadim Gennad'evich

Publications in Math-Net.Ru

1. Влияние дизайна буферного слоя на фотолюминесценцию InAs квантовых точек, выращенных на подложках GaAs/Si(100)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  16–21
2. Formation of InAs nanoislands on silicon surfaces and heterostructures based on them
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  332–337
3. Optical properties of Cu$_2$O nanowhiskers
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1075–1081
4. Emission kinetics of surface (bi)excitons in ZnO thin films
   
   Fizika Tverdogo Tela, 61:3 (2019),  533–538
5. Directional emission from beryllium doped GaAs/AlGaAs nanowires
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  71–77
6. Temperature quenching of spontaneous emission in tunnel-injection nanostructures
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1531–1539
7. Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1209–1216
8. A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  36–43
9. Pseudomorphic GeSn/Ge (001) heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1462–1466
10. Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1356–1360
11. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
12. InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1084–1092
13. Specific features of the temperature dependence of the exciton absorption integral coefficient in $\mathrm{CdS}$ crystals
    
    Fizika Tverdogo Tela, 28:6 (1986),  1931–1934