Shuman Valentina Borisovna

Publications in Math-Net.Ru

1. Electrically inactive magnesium in silicon
   
   Fizika Tverdogo Tela, 67:5 (2025),  797–799
2. Interaction of Mg with oxygen and carbon in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  75–77
3. Double magnesium donors as a potential active medium in the terahertz range
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  455–460
4. Solubility of magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  858–861
5. Thermal activation of valley-orbit states of neutral magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  500
6. Optical cross sections and oscillation strengths of magnesium double donor in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  299–303
7. Investigation of the magnesium impurity in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  321–326
8. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
9. DLTS investigation of the energy spectrum of Si : Mg crystals
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  799–804
10. Decomposition of a solid solution of interstitial magnesium in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  314–316
11. High-temperature diffusion of magnesium in dislocation-free silicon
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1075–1077
12. On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects
    
    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  830–834
13. Diffusion of interstitial magnesium in dislocation-free silicon
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  5–7
14. Formation of S$_2$ “quasi-molecules” in sulfur-doped silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  433–434
15. Doping of silicon with selenium by diffusion from the gas phase
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  428–431
16. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  211–215
17. Solubility of sulfur in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  993–994
18. Однородный лавинный пробой в кремниевых диодах
    
    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  607–611
19. AVALANCHE BREAKDOWN UNDER HIGH-CURRENT DENSITIES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1843–1845
20. Effect of Radiation-Induced Defects on Current-Voltage Characteristic of Silicon Multilayer Structures
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  532–534
21. Some technological aspects of sulfur diffusion in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  227–229
22. INCREASING OF THE DIODE HIGH-SPEED RESPONSE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984),  1424–1426
23. Исследование влияния оже-рекомбинации на вольтамперную характеристику кремниевых многослойных структур
    
    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  474–478