Мnatsakanov Tigran Tigranovich

Publications in Math-Net.Ru

1. Current–voltage characteristics of power diode structures with strong asymmetry of emitters injection ability
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  524–532
2. High-power Schottky diodes with a negative-differential-resistance portion in the I–V characteristic
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  75–82
3. S-shaped I – V characteristics of high-power Schottky diodes at high current densities
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  470–477
4. Multidimensional $dU/dt$ effect in high-power thyristors
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  69–73
5. Theoretical analysis of the effect of $dU/dt$ in 4H–SiC thyristor structures
   
   Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1544–1550
6. Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1125–1130
7. On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  830–834
8. Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  234–239
9. High-voltage silicon-carbide thyristor with an $n$-type blocking base
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  408–414
10. Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  302–309
11. Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1224–1229
12. Modulation waves of charge carriers in $n$- and $p$-type semiconductor layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  196–201
13. Оценка роли электронно-дырочного рассеяния в переносе носителей заряда в многослойных арсенид-галлиевых структурах
    
    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1668–1670
14. О соотношении подвижностей носителей заряда в полупроводниках $n$- и $p$-типа
    
    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1658–1663
15. EFFECT OF THE COMPLETE ENTRAPPING OF NONMAJOR DISCHARGE CARRIERS BY MAJOR CARRIERS AND ITS INFLUENCE ON PROPERTIES OF MULTILAYERED SEMICONDUCTOR STRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 56:9 (1986),  1827–1829
16. Effect of Radiation-Induced Defects on Current-Voltage Characteristic of Silicon Multilayer Structures
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  532–534
17. О соотношении Эйнштейна в полупроводниках в условиях сильного электронно-дырочного рассеяния
    
    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1293–1296
18. TRANSITION PROCESS OF THE P-N TRANSITION DIFFUSION SWITCHING
    
    Zhurnal Tekhnicheskoi Fiziki, 53:1 (1983),  189–191
19. Исследование влияния оже-рекомбинации на вольтамперную характеристику кремниевых многослойных структур
    
    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  474–478