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Andreev Igor Anatol'evich

Publications in Math-Net.Ru

  1. InAs/InAsSbP bridge photodiodes: features of the fabrication technology

    Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  505–509
  2. Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  34–37
  3. Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  508–515
  4. Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  995–1010
  5. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
  6. Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  677–683
  7. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE

    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
  8. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
  9. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
  10. Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons

    Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017),  315–318
  11. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201
  12. Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1420–1424
  13. Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1720–1726
  14. Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  1003–1006
  15. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 $\mu$m based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1109–1115
  16. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1037–1042
  17. Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  690–695
  18. Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  43–49
  19. Passivation of infrared photodiodes with alcoholic sulfide solution

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  535–539
  20. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  251–255
  21. Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  95–103
  22. Photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for 2.5–4.9 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:1 (2011),  11–17
  23. Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  699–705
  24. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49
  25. UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  50–53
  26. Ëàâèííîå óìíîæåíèå è êîýôôèöèåíòû èîíèçàöèè â GaInAsSb

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1429–1436
  27. UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF 2-3,5 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  27–32
  28. LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  71–76
  29. SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  15–19
  30. GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  986–991
  31. CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988),  389–393
  32. Avalanche multiplication in photodiode structures, based on $Ga\,In\,As\,Sb$ solid-solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  481–485
  33. Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1311–1315
  34. Dark Currents in GaAlSb(As) Diode Structures of «Resonant» Composition

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1605–1611
  35. Collision-Ionization Coefficients of Electrons and Holes in Narrow-B and Solid Solutions Based on InAs

    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  545–547
  36. NEW PIEZOELECTRIC LANGASIT LA3GA5SIO14-MATERIAL WITH ZERO TEMPERATURE-COEFFICIENT OF ELASTIC OSCILLATION PARTICLES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:8 (1984),  487–491
  37. WEAK TEMPERATURE-DEPENDENCE OF ELASTIC PLIABILITY S11 AND S44 OF A BA0.39SR0.61NB2O6 CRYSTAL NEAR THE 20-DEGREES-C

    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1632–1635

  38. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476

© Steklov Math. Inst. of RAS, 2026