Kardo-Sisoev Aleksey Fedorovich

Publications in Math-Net.Ru

1. The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  326–332
2. The ratio of active and reactive losses in drift step recovery diodes depending on their operating mode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:24 (2023),  6–10
3. Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  57–63
4. Effect on minority-carrier accumulation in $p^{+}$ layer on the process of voltage reconstruction on $p^{+}{-}n$ junction
   
   Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1048–1053
5. Ударная ионизация в кремнии в слабых полях
   
   Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  885–892
6. Нестационарные процессы двойной инжекции и рассасывания плазмы в полупроводниковой $p^{+}{-}n{-}n^{+}$-структуре
   
   Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  3–11
7. HIGH-SPEED DINISTORS MANUFACTURED BY THE WAFER DIRECT BONDING TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:19 (1991),  51–54
8. SHOCK IONIZATION OF DEEP LEVEL OF AU IN SI
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  63–67
9. INVERSE VOLTAGE FAST REDUCTION EFFECT ON THE SYMMETRIC P+PNN+-STRUCTURE
   
   Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988),  2244–2247
10. Нестационарные токи двойной инжекции в условиях насыщения скоростей дрейфа электронов и дырок
    
    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1747–1753
11. Nonstationary Processes of Electron-Hole Plasma Accumulation and Dispersal in Semiconductors in High Electric Fields
    
    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  620–625
12. Formation of high-voltage differential pressure of picosecond range on arsenide-gallium diodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1089–1093
13. Fast Ionization Waves in a Semiconductor Related with Superradiation
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1335–1337
14. Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1281–1285
15. Semiconductor powerful subnanosecond commutators with more time retentivity under conducting conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  901–904
16. Начальная стадия развития волн ударной ионизации в перенапряженных $p{-}n$-переходах
    
    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1380–1385
17. Формирование высоковольтных наносекундных перепадов напряжения на полупроводниковых диодах с дрейфовым механизмом восстановления напряжения
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  435–439