Lantratov Vladimir Mikhailovich

Publications in Math-Net.Ru

1. Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments
   
   Zhurnal Tekhnicheskoi Fiziki, 84:6 (2014),  92–97
2. Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  671–676
3. Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells
   
   Zhurnal Tekhnicheskoi Fiziki, 83:7 (2013),  106–110
4. Local triboelectrification of an $n$-GaAs surface using the tip of an atomic-force microscope
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1181–1184
5. Picosecond internal $Q$-switching mode correlates with laser diode breakdown voltage
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  383–385
6. Photoelectric determination of the series resistance of multijunction solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1074–1081
7. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
8. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors
   
   Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1649–1654
9. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1568–1576
10. Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1118–1123
11. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе
    
    Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
12. Фотолюминесцентные свойства GaAs, легированного рением
    
    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1194–1199
13. Reduction of surface recombination current in R-P $Al\,Ga\,As/Ga\,As$ transitions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:24 (1987),  1481–1485
14. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
15. Theory of Photoelectric Converter with Energy-Gap Gradient in the Space-Charge Region of Hetero-$p{-}n$-Junction
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1262–1270
16. High-Efficiency Information-Energy AlGaAs-GaAs Photoreceivers for Fiber-Optical Communication Lines
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  435–439
17. BEHAVIOR OF ALGAAS HETEROPHOTOELEMENTS AT LOW (10(-1)-10(-3)VT-CM2) EXPOSURE LEVEL AT THE 173-373-K TEMPERATURE-RANGE
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2004–2009
18. Sublinearity of Capacity–Voltage Characteristics of Sharp Asymmetric $p{-}n$ Junctions
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1589–1596
19. Heterophotocells with Low Value of Saturation Back Current
    
    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  276–281
20. SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION POSITION
    
    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1658–1660
21. Эффективный перенос возбуждения из эмиттера в активную область при фотолюминесценции InGaAsP/InP ДГС
    
    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2168–2172