|
|
Publications in Math-Net.Ru
-
High-temperature manganese diffusion into KDB-3 silicon: formation of Mn$_5$Si$_3$ and B$_6$Si phases, morphology and
electrophysical properties
Fizika i Tekhnika Poluprovodnikov, 59:10 (2025), 601–607
-
Diffusion of phosphorus and gallium from a deposited layer of gallium phosphide into silicon
Fizika Tverdogo Tela, 64:11 (2022), 1648–1655
-
Spectral dependende of the photoconductivity of varizon structures of the type Ge$_x$Si$_{1-x}$, obtained by diffusion technology
Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 495–497
-
Comparative study of photocells based on silicon doped with nickel by various methods
Fizika i Tekhnika Poluprovodnikov, 56:4 (2022), 438–440
-
Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon
Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 199–203
-
Anomalous photoelectric phenomena in silicon with nanoclusters of manganese atoms
Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 489–492
-
An infrared radiation photoresistor based on silicon with nanoclusters of manganese atoms
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 12–15
-
Low-frequency current oscillations in silicon compensated with zinc
Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1536–1539
-
EFFECT OF ELASTICITY OF DIFFUSANT VAPORS ON CONCENTRATION OF
ELECTROACTIVE ATOMS AND DEGREE OF COMPENSATION OF SI(ZN) MODELS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:12 (1991), 1–4
-
Dynamic Chaotic State and Hysteresis of Auto-Oscillations in Si$\langle$Mn$\rangle$ due to Temperature-Electric Instability
Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1400–1403
-
Effect of Ellastic Compression in the [100] Direction on the Parameters of ТЕI in Manganese-Doped Silicon
Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1561–1564
-
Effect of a Magnetic Field on Temperature-Electric Instability in Manganese-Doped Silicon
Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 423–426
-
Низкочастотные колебания тока с большой амплитудой в компенсированном
марганцем кремнии
Fizika i Tekhnika Poluprovodnikov, 18:12 (1984), 2220–2222
© , 2026