Askarov Sh I

Publications in Math-Net.Ru

1. Влияние плотности атомов диффузанта на коэффициент диффузии и концентрацию электроактивных атомов серы в кремнии
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:4 (1992),  52–54
2. Some Characteristic Properties of Interaction between Impurity Centers and Deep Donor Levels in Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1456–1459
3. Auto-Oscillations of Corrent in Sulphur-Doped Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1315–1317
4. Effect of Ellastic Compression in the [100] Direction on the Parameters of ТЕI in Manganese-Doped Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1561–1564
5. Effect of a Magnetic Field on Temperature-Electric Instability in Manganese-Doped Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  423–426