Bakhadyrkhanov M K

Publications in Math-Net.Ru

1. Effect of nickel on the lifetime of charge carriers in silicon solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  128–133
2. Gettering properties of nickel in silicon photocells
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1685–1688
3. Physical foundations of the formation of the silicon-based heterovarizonic structure
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1678–1684
4. Optimal conditions for nickel doping to improve the efficiency of silicon photoelectric cells
   
   Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  981–986
5. Anomalous photoelectric phenomena in silicon with nanoclusters of manganese atoms
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  489–492
6. The effect of negative magnetoresistance in silicon to create multifunctional sensors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  7–11
7. An infrared radiation photoresistor based on silicon with nanoclusters of manganese atoms
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  12–15
8. Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  37–40
9. Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material
   
   Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  421–425
10. Studying the effect of doping with nickel on silicon-based solar cells with a deep $p$–$n$-junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  3–6
11. IR photodetectors operating under background illumination
    
    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  140–142
12. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1376–1378
13. Control of the magnetic properties of silicon with manganese atom nanoclusters
    
    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  139–141
14. Specific features of magnetoresistance in overcompensated manganese-doped silicon
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1014–1016
15. Negative magnetoresistance in silicon with manganese-atom complexes [Mn]$_4$
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1181–1184
16. Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:16 (2010),  11–18
17. Low-frequency current oscillations in silicon compensated with zinc
    
    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1536–1539
18. Влияние плотности атомов диффузанта на коэффициент диффузии и концентрацию электроактивных атомов серы в кремнии
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:4 (1992),  52–54
19. Определение профиля концентрации марганца и никеля, имплантированных в кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1952–1956
20. Возбуждение рекомбинационных волн в кремнии, компенсированном марганцем при одноосной упругой деформации
    
    Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1731–1736
21. EFFECT OF ELASTICITY OF DIFFUSANT VAPORS ON CONCENTRATION OF ELECTROACTIVE ATOMS AND DEGREE OF COMPENSATION OF SI(ZN) MODELS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:12 (1991),  1–4
22. Влияние никеля на образование термодоноров в монокристаллах кремния
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2202–2203
23. Неустойчивость тока в кремнии, компенсированном марганцем, связанная с рекомбинационными волнами
    
    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1646–1650
24. Распад твердого раствора Si$\langle\text{Mn}\rangle$ при всестороннем гидростатическом сжатии
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  123–128
25. Effect of Axial Compression on Current–Voltage Characteristics of Manganese-Doped Silicon Diodes
    
    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1710–1712
26. Some Characteristic Properties of Interaction between Impurity Centers and Deep Donor Levels in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1456–1459
27. Dynamic Chaotic State and Hysteresis of Auto-Oscillations in Si$\langle$Mn$\rangle$ due to Temperature-Electric Instability
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1400–1403
28. Auto-Oscillations of Corrent in Sulphur-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1315–1317
29. Effect of Ellastic Compression in the [100] Direction on the Parameters of ТЕI in Manganese-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1561–1564
30. Effect of a Magnetic Field on Temperature-Electric Instability in Manganese-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  423–426
31. Piezoeffect and Hall Effect in $p$-Type Si$\langle\text{Mn}\rangle$ under Uniaxial Elastic Deformation
    
    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  2052–2054
32. Низкочастотные колебания тока с большой амплитудой в компенсированном марганцем кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2220–2222
33. Влияние $\gamma$-облучения на электрические и фотоэлектрические свойства компенсированного марганцем кремния
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  973–976