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Publications in Math-Net.Ru
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Determining the hydrogen concentration from the photovoltage of Pd–oxide–InP MIS structures
Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1183–1186
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High-temperature luminescence in an $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb light-emitting heterostructure with a high potential barrier
Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1270–1275
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Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 $\mu$m) optron consisting of an LED array and a wideband photodiode
Zhurnal Tekhnicheskoi Fiziki, 80:2 (2010), 99–104
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electric and photoelectric properties of Pd${-}p{-}p^{+}$-InP diode structures and their variation in hydrogen atmosphere
Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1750–1754
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Произведение $R_{0}A$ в InAs $p{-}n$-переходах
Fizika i Tekhnika Poluprovodnikov, 25:10 (1991), 1686–1690
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Токи двойной инжекции и фототок в диодных
структурах Pd${-}p{-}p^{+}{-}$InP
Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1466–1468
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Фотодетектор на основе InGaAs
как детектор водорода
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:15 (1991), 1–4
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Поверхностно-барьерные структуры
Au${-}p$-InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
Fizika i Tekhnika Poluprovodnikov, 22:8 (1988), 1528–1529
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О механизмах рекомбинации носителей тока
в $p$-InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 789–792
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On the Electrophysical and Photoelectrical Properties of InAs$_{1-x-y}$Sb$_{x}$P$_{y}$Based Eреtaxial Diode Structures
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2195–2198
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On the Lifetimes of Charge Carriers in Zn- and Mn-Doped In$_{1-x}$Ga$_{x}$As Solid Solutions
Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 537–538
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On the Recombination Mechanisms in Indium-Arsenide Crystals
Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 403–406
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