Zakhgeim Aleksandr L'vovich

Publications in Math-Net.Ru

1. Исследование предельных энергетических возможностей мощных ультрафиолетовых (370 nm) матричных излучателей: токовый и температурный факторы
   
   Optics and Spectroscopy, 133:11 (2025),  1172–1175
2. Photoluminescence of PbS quantum dots in an inorganic glass matrix excited by leds: spectra and quantum efficiency
   
   Optics and Spectroscopy, 133:10 (2025),  1068–1070
3. Reduction of external quantum efficiency of ultraviolet LEDs caused by overdoping of barriers with silicon
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  397–401
4. Near-field radiation and the effect of non-uniformity of current density distribution in AlInGaN micro-leds
   
   Optics and Spectroscopy, 132:12 (2024),  1236–1239
5. Thermal resistance of LEDs based on a narrow-gap InAsSb solid solution
   
   Optics and Spectroscopy, 131:11 (2023),  1502–1504
6. On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  42–52
7. The electro-thermo-optical characteristics and limiting energy capabilities of high-power deep ultraviolet light emitting diodes $\lambda\approx$ 270 nm)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:9 (2023),  17–20
8. The limiting energy capabilities of high-power AlInGaN LEDs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022),  33–36
9. Features of operation of high-power AlInGaN LEDs at high pulse currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  32–35
10. Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  45–48
11. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
12. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  708–713
13. Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  219–223
14. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431
15. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
16. A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  390–396
17. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95
18. Amplitude fluctuations of the continuous $Nd$-YAG-laser with the LED-pump
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1258–1263