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Publications in Math-Net.Ru
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Nano-electromagnets based on hybrid SiC/Si nanostructures
Fizika Tverdogo Tela, 67:8 (2025), 1432–1436
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Photoluminescence related to dislocations in silicon plastically deformed under bending mode of central symmetry
Fizika Tverdogo Tela, 67:5 (2025), 810–816
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Andreev terahertz irradiation generators
Fizika Tverdogo Tela, 66:11 (2024), 2052–2058
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Express diagnostics of DNA oligonucleotides
Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024), 1597–1602
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Macroscopic quantum phenomena under conditions of deposition of DNA oligonucleotides into the edge channels of a silicon nanosandwich structure
Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024), 1588–1596
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Control of the blood oxygenation process under the effect of THz radiation
Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024), 1583–1587
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Using terahertz irradiation to mitigate the effects of radiation exposure
Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022), 1087–1094
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Magnetic properties of edge channels of silicon nanosandwich structures with deposited DNA oligonucleotides
Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022), 963–967
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Therapy of covid complications with terahertz irradiation
Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022), 943–950
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Terahertz express diagnostics of complications caused by COVID-19
Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022), 939–942
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Registration of terahertz radiation with silicon carbide nanostructures
Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1195–1202
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Terahertz emission from silicon carbide nanostructures
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1027–1033
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Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces
Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 103–111
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Terahertz radiation sources and detectors based on optical microcavities embedded in the edge channels of silicon nanosandwiches
Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1663–1671
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Terahertz response of biological tissue for diagnostic and treatment in personalized medicine
Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020), 1502–1505
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High temperature quantum kinetic effects in silicon nanosandwiches
Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 473
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Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1353–1357
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Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures
Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1230–1237
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Room temperature de Haas–van Alphen effect in silicon nanosandwiches
Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1047–1054
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Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 474–484
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Defect-related luminescence in silicon $p^+$–$n$ junctions
Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1258–1261
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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 663–671
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Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on $n$-Si (100)
Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1646–1653
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Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures
Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1549–1554
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Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures
Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1503–1516
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Features of the electroluminescence spectra of quantum-confined silicon $p^+$–$n$ heterojunctions in the infrared spectral region
Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1530–1535
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On the electrically detected cyclotron resonance of holes in silicon nanostructures
Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 503–509
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Infrared luminescence from silicon nanostructures heavily doped with boron
Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 289–303
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The de Haas-van Alphen effect in nanostructures of cadmium fluoride
Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 90–95
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Spin interference of holes in silicon nanosandwiches
Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 77–89
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Shubnikov–de-Haas and de-Haas–van-Alphen oscillations in silicon nanostructures
Fizika i Tekhnika Poluprovodnikov, 45:11 (2011), 1503–1508
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Quantum spin Hall effect in nanostructures based on cadmium fluoride
Fizika i Tekhnika Poluprovodnikov, 44:10 (2010), 1372–1381
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Фрактально-диффузионные $p{-}n$-переходы в кремнии
Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 644–654
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Генерация и отжиг дефектов при совмещенном геттерировании в кремнии
$n$-типа. II. Точечные дефекты, индуцированные геттерирующими микродефектами
Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1563–1573
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Генерация и отжиг дефектов при совмещенном генерировании в кремнии
$n$-типа. I. Геттерирующие микродефекты
Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1557–1562
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Распределение радиационных дефектов и физическая природа
«аномальных» спектров DLTS в кремниевых диодах, облученных
$\alpha$-частицами
Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 844–848
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CRITERIA OF OPTIMAL CLARIFICATION OF AN OPTIC-SYSTEM OF
AIR-SIOX-POLYCRYSTALLINE-SI-MONOCRYSTALLINE-SI IN THE SPECTRAL REGION
550-950-NM
Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 823–826
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Contribution of Silicon Recombination Characteristics into Resolution of Detectors of Short-Path Particles
Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1883–1887
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Charge Transfer in the Structures of Silicon Detectors with the Build-in Field
Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1394–1399
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Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 565–569
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RESOLUTION OF THE ALPHA-SPECTRUM SUPER-THIN STRUCTURE BY SILICONE PLANAR
DETECTORS
Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986), 1987–1989
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High-resolution performance of silicon detectors of short-range particles
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986), 1254–1258
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INVESTIGATION OF THE THIN
SIOX(O-GREATER-THAN-OR-EQUAL-TO-X-GREATER-THAN-OR-EQUAL-TO-2) FILMS ON
SPECTRAL CHARACTERISTICS OF SILICON P-N TRANSITIONS
Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2191–2195
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Photoelectric characteristics of the $Si\,O_{x}$ ($1\leqslant x \leqslant 2$)-polycrystal $Si-Ge$ system
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 675–679
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Spectral characteristics of selective photo-detectors for the visible and ultraviolet-spectrum area
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985), 354–358
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Correction
Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2232
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Исследование вольтамперных характеристик $p{-}n$-переходов
поликристаллический кремний–монокристаллический кремний
Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1648–1651
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