Ostroumova E V

Publications in Math-Net.Ru

1. Specific features of current–voltage characteristics of field-effect transistors with active layers based on composite films of semiconductor polymers with nanoparticles of inorganic perovskites
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  47–50
2. Erratum to: “Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields”
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:8 (2015),  409
3. Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  103–110
4. SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991),  44–48
5. Injection capability of the MOS-emitter with tunnel-thin oxide layers during high-current densities
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:19 (1986),  1209–1212