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Strokan Nikita Borisovich

Publications in Math-Net.Ru

  1. Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors

    Zhurnal Tekhnicheskoi Fiziki, 82:4 (2012),  131–135
  2. Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of $n$-type

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  473–481
  3. On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1422–1426
  4. Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  145–148
  5. Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on $p$-type silicon

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1064–1067
  6. The problem of uniformity of properties of 4H-SiC CVD films

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  1002–1006
  7. Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  706–712
  8. Deep levels of thermodefects in high-resistance specially pure $n$-type silicon

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1962–1970
  9. Pseudopeaks in DLTS spectra of planar diode structures

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  477–480
  10. RADIATION OF PLANAR DETECTOR STRENGTH BASED ON HIGH-OMHIC SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  69–73
  11. Возможности профилирования концентрации тяжелых элементов в тонких ВТСП-пленках на пучках быстрых ионов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:6 (1992),  91–94
  12. К вопросу о спектре глубоких уровней, создаваемых в кремниевых детекторах излучений $\alpha$-частицами

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  852–858
  13. APPLICATION OF RUTHERFORD ION DISPERSION WITH PRECISION RESOLUTION TO THE ANALYSIS OF MULTICOMPONENT FILMS

    Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989),  159–161
  14. Об использовании кремниевых структур типа М$-$П$-$М в методе емкостной спектроскопии глубоких уровней

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1613–1617
  15. Кинетика тока, ограниченного объемным зарядом, в полупроводниковых $n^{+}{-}p{-}p^{+}$-структурах

    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  478–482
  16. Диффузионные процессы в пакете носителей, дрейфующих в поле $p{-}n$-перехода

    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1629–1633
  17. Изменение градиента концентрации лития при компенсации полупроводников методом дрейфа ионов

    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1526–1528
  18. Принцип встроенного электрического поля в проблеме полупроводниковой спектрометрии сильно ионизирующих частиц

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1239–1243
  19. Переходный ток, ограниченный объемным зарядом, в недообедненных структурах с блокирующими контактами

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1096–1100
  20. Contribution of Silicon Recombination Characteristics into Resolution of Detectors of Short-Path Particles

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1883–1887
  21. Theory of Semiconductor Compensation by the Method of Ionic Drift of Doping Impurity

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1673–1680
  22. Impact Ionization in Sharp $p^{+}{-}n$ Junctions under Dynamic Focusing of an Electric Field by the Track of Strongly Ionizing Particle

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1388–1393
  23. Peculiarities of $p^{+}{-}n$-Structure Barrier Capacity in the Injection Mode

    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  291–295
  24. Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  565–569
  25. RESOLUTION OF THE ALPHA-SPECTRUM SUPER-THIN STRUCTURE BY SILICONE PLANAR DETECTORS

    Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986),  1987–1989
  26. Process of Concentration Establishment in a Drifting Packet of Excess Carriers Injected into the $p{-}n$-Junction

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1856–1860
  27. On the Use of Electrooptical Effect for Studying Space-Charge Region of $p{-}n$ Structures

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1234–1238
  28. Temperature Effect on Carrier Trapping by Localized Aggregates of Impurities

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  350–353
  29. High-resolution performance of silicon detectors of short-range particles

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1254–1258
  30. INFLUENCE OF LOCAL CLUSTER ADMIXTURES ON A FORMATION OF THE SPECTRAL-LINE IN SEMICONDUCTING DETECTORS

    Zhurnal Tekhnicheskoi Fiziki, 55:7 (1985),  1400–1405
  31. LINE-SHAPE AND A RESOLUTION OF EMISSION DETECTORS DURING PULSED CURRENT SPECTROMETRY

    Zhurnal Tekhnicheskoi Fiziki, 55:6 (1985),  1130–1135
  32. Trapping of Charge Carriers by Localized Impurity Clusters in an Electric Field of $p{-}n$ Junction

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  70–76
  33. Study of Impurity Clusters in Pure Materials Using Shapes of Spectra due to Electron–Positron Pairs Annihilation

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  244–249
  34. Properties of Submicrometer Layers on Pure Germanium Produced by the Ion-Laser Method

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  62–67
  35. Кинетика быстродействующих $p{-}n$-фотодиодов на материалах с собственной проводимостью

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  143–146
  36. Особенности кинетики тока, ограниченного объемным зарядом в $p{-}n$-переходах с электронейтральной базой

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  139–142

© Steklov Math. Inst. of RAS, 2026