Pogorel'skii Yu V

Publications in Math-Net.Ru

1. Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH$_3$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:17 (2015),  83–93
2. Phase transformations of amorphous binary semiconductor under pulsed laser irradiation
   
   Fizika Tverdogo Tela, 33:1 (1991),  99–103
3. CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM EPITAXY
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:24 (1991),  94–98
4. STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  42–44
5. LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  31–34
6. POTENTIAL MECHANISM OF COLD NUCLEAR SYNTHESIS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  91–94
7. DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED SILICON LAYERS UNDER NANOSECOND LASER-PULSES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  13–17
8. LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  67–69
9. Melting of Semiconductors by Pulsed Laser Radiation (Review)
   
   Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  1945–1969
10. Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1119–1122
11. The effect of nanosecond laser-pulses on the melting of graphite and diamonds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  921–924
12. The effect of nanosecond laser-pulses on indium-phosphide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  916–920
13. Dynamics of reflection coefficients of crystal $Si$ and $Ga\,As$ induced by picosecond laser-pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  761–765
14. Induced Mandelshtam-Brillouin scattering and ultrasound amplification with light at forward scattering
    
    Fizika Tverdogo Tela, 26:6 (1984),  1735–1738
15. LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE SUBNANOSECOND LASER-PULSE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1281–1286
16. Free charge carrier effect on the stimulated Mandelshtam-Brillouin scattering in piezoelectrics at a steady electric field
    
    Fizika Tverdogo Tela, 25:9 (1983),  2802–2804
17. Новый фазовый переход в SiC и GaAs под действием пикосекундных лазерных импульсов
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983),  1373–1376
18. О возможностях метода фотолюминесценции в исследовании лазерной аморфизации арсенида галлия
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1298–1301