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Sachenko Anatoly Vasilyvich

Publications in Math-Net.Ru

  1. Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  485–492
  2. On a new mechanism for the realization of ohmic contacts

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  138–142
  3. The effect of base thickness on photoconversion efficiency in textured silicon-based solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  40–49
  4. Electroluminescent study of the efficiency of silicon heterostructural solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  3–11
  5. Peculiarities of photoconversion efficiency modeling in perovskite solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  88–96
  6. Specific features of current flow in $\alpha$-Si : H/Sii heterojunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:3 (2017),  29–38
  7. On the ohmicity of Schottky contacts

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  777–784
  8. Simulation of the real efficiencies of high-efficiency silicon solar cells

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  531–537
  9. Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  259–263
  10. The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  82–87
  11. The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  70–76
  12. Simulation of the natural characteristics of vertical $a$-Si : H/$\mu c$-Si:H tandem solar cells. 2. Analysis of the results and comparison with the experiment

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  707–714
  13. Simulation of the natural characteristics of vertical $a$-Si : H/$\mu c$-Si:H tandem solar cells. 1. General relations

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  697–706
  14. Temperature dependences of the contact resistivity in ohmic contacts to $n^+$-InN

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  472–482
  15. Features of photoconversion in highly efficient silicon solar cells

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  271–277
  16. Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015),  42–49
  17. Mechanism of current flow in a Au–Ti–Al–Ti–n$^+$-GaN ohmic contact in the temperature range of 4.2–300 K

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1344–1347
  18. Modeling the efficiency of multijunction solar cells

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  693–701
  19. Current flow through metal shunts in ohmic contacts to $n^+$-Si

    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  509–513
  20. Annual dependences of generated power and electrical energy for $a$-Si:H-based solar cells

    Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013),  86–91
  21. Simulation of daytime variations in the characteristics of $a$-Si:H solar cells

    Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013),  78–85
  22. Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1191–1195
  23. The mechanism of contact-resistance formation on lapped $n$-Si surfaces

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  426–431
  24. Effect of microwave irradiation on the resistance of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  558–561
  25. Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  348–355
  26. Temperature dependence of contact resistance for Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contacts subjected to microwave irradiation

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  344–347
  27. SStudy of the layer-substrate interface in nc-SiO$_2$–$p$-Si

    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1224–1228
  28. Effect of friedel oscillations on the capacity of a double electric layer

    Fizika Tverdogo Tela, 34:7 (1992),  2287–2290
  29. Effect of photocurrent amplification in semiconductor–tunnelly transparent dielectric–semiconductor structures

    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  295–304
  30. К определению характерных длин собирания фототока в поверхностно-барьерных структурах на основе аморфного гидрированного кремния

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1867–1870
  31. Поверхностная релаксация энергии и отрицательная дифференциальная проводимость тонких образцов

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  522–524
  32. VOLT-AMPERE CHARACTERISTICS OF MTDS STRUCTURES IN THE MODE OF STATIONARY AVALANCHE BREAKDOWN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1729–1732
  33. Kinetics of Photoresponse and Mechanism of Current Flow in Silicon Structures of Semiconductor–Thin Dielectric–Semiconductor

    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1444–1450
  34. Anomalous Photoeffect on the Cuprous Oxide – Electrolyte Interface

    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  876–880
  35. Photomagnetic Effect in Si$-$SiO$_{2}$ Structures

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  257–262
  36. Physical Limitations on the Efficiency of Phototransformation in Surface-Barrier Structure Based on Amorphous Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1468–1472
  37. Спектральные зависимости фототока в поверхностно-барьерных структурах на основе аморфного гидрогенизированного кремния. Теоретические соотношения

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1782–1786
  38. Кинетика фотоответа туннельных МДП структур

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1471–1477
  39. Фотоэлектрические свойства структур металл–диэлектрик–полупроводник с туннельно-прозрачным слоем диэлектрика

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1361–1376

© Steklov Math. Inst. of RAS, 2026