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Baransky P I

Publications in Math-Net.Ru

  1. Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it

    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  975–980
  2. Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  751–756
  3. Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  737–739
  4. Рекомбинация в Hg$_{1-x-y}$Cd$_{x}$Mn$_{y}$Te ($x\cong 0.28{-}0.35$, $y\cong 0.01{-}0.02$)

    Fizika i Tekhnika Poluprovodnikov, 25:7 (1991),  1183–1187
  5. Mechanism of carrier mobility variation under ultrasonic treatment of semiconducting solid solutions

    Fizika Tverdogo Tela, 32:7 (1990),  2159–2161
  6. Явления переноса и рекомбинация в твердых растворах Mn$_{x}$Hg$_{1-x}$Te ($x\sim 0.1$)

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1490–1493
  7. Влияние пластической деформации на гальваномагнитные и фотоэлектрические свойства $n$-Cd$_{x}$Hg$_{1-x}$Te

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  121–125
  8. Role of small small-angle boundaries in the ultrasound-induced variation of the electrophysical parameters of $\mathrm{Cd}_{x}\mathrm{Hg}_{1-x}\mathrm{Te}$ crystals

    Fizika Tverdogo Tela, 31:9 (1989),  278–281
  9. О прыжковой проводимости в полупроводниковом алмазе

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2214–2217
  10. Особенности рассеяния дырок в синтетических алмазах в греющих электрических полях

    Fizika i Tekhnika Poluprovodnikov, 22:11 (1988),  2069–2071
  11. Тензор Нернста–Эттингсгаузена в одноосно деформированных полупроводниках в условиях электрон-фононного увлечения

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  355–356
  12. Влияние иттербия на электрофизические свойства эпитаксиальных слоев $n$-GaP

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  158–161
  13. Effect of Strong Uniaxial Elastic Deformations on the Impurity-Band Conduction in $n$-Туре Ge$\langle$Sb$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1477–1479
  14. Influence of Surface Conduction on Galvanomagnetic Effects in $n$-Cd$_{x}$Hg$_{1-x}$Te

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1021–1025
  15. Symmetry of Piezothermo E. M. F. Tensor for $n$-Type Germanium and Silicon Crystals

    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  718–723
  16. Commutation Effect in Deformation Cubic Semiconductors (Even Part)

    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  335–337
  17. Temperature Dependence оf Hole Mobility in a Semiconductor Synthetic Diamond

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  75–79
  18. Mobility Anisotropy and Deformation Potentials of Germanium Valence Band under Strong Uniaxial Deformation

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2112–2115
  19. Influence of Ultrasound on Galvanomagnetic Effects in $n$-Type (Cd, Hg)Te

    Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1104–1106
  20. Piezoresistance Related with Bending of Conduction-Band Bottom Energy Relief of $n$-Type Si Crystals Elastically Deformed in the $\langle111\rangle$ Direction

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  770–773
  21. Thermoelectric Characteristics of Elastically Deformed $n$-Туре Germanium in the Range of Electron-Phonon Drag

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  356–357
  22. Commutation Effect in Uniaxially Deformed $n$-Type Silicon and $n$-Type Germanium. III

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  221–226
  23. Mechanisms of Piezoresistance in $n$-Type Ge Heavy Doped Crystals at 4.2 К

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1898–1899
  24. Nernst–Ettingshausen Tensor in Uniaxially Deformed $n$-Silicon and $n$-Germanium. II

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1774–1779
  25. Piezoresistance and Hall Effect of Heavily Doped $n$-Type Si Crystals

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1768–1770
  26. Effect of Thermal-Treatment Conditions on Drag Plezothermoelectromotive Force in Transmutationally Doped and Ordinary Silicon Crystals

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1712–1715
  27. Piezoresistance of $n$-Type Si Degenerate Crystals along and across the Axis of Deformation

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1411–1413
  28. Negative Piezoresistance in Transmutationally Doped $n$-Type Si Crystals under Uniaxial Elastic Deformation

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  947–949
  29. Nernst–Ettingshausen Tensor in Uniaxially Deformed Semiconductors of Cubic System. I

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  497–501
  30. « Внутризонная» анизотропия рассеяния носителей тока в пластически деформированном $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2224–2227
  31. Концентрационная зависимость параметра анизотропии термоэдс в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2053–2056
  32. Тензор Холла в одноосно деформированных полупроводниках кубической симметрии

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1841–1845
  33. Temperature Dependence of Anisotropy in Drag Thermoelectromotive Force in Uniaxially Deformed $n$-Туре Si

    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1059–1063
  34. Determination of the Parameter of Drag Thermoelectromotive Force Anisotropy under Deformation of $n$-Type Si in the [110] Direction

    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  538–540
  35. Сравнение экспериментальных и теоретических данных по анизотропии рассеяния носителей тока в монокристаллах $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  1118–1120
  36. Механизмы рассеяния носителей тока, ответственные за формирование магнитопьезосопротивления $n$-Si в области сильных упругих деформаций

    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  1064–1067
  37. The electric field in a circular semiconductor plate placed in a magnetic field

    Prikl. Mekh. Tekh. Fiz., 7:5 (1966),  64–72

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